Design and simulation of a single-electron random-access memory array
IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications - Tập 49 Số 9 - Trang 1370-1375 - 2002
Tóm tắt
A single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. This memory array utilizes a basic single-electron memory cell that has been recently fabricated. Bits of information are represented by the presence or absence of a single or a small number of electrons at conducting islands. Simulation shows that selective read and write operations can be performed in this memory array.
Từ khóa
#Single electron memory #Circuit simulation #Electron traps #Computational modeling #Computer simulation #Application software #CMOS technology #Read-write memory #Power dissipation #InvertersTài liệu tham khảo
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