Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks

International technology roadmap for semiconductor. 2004 edition. Available from: http://public.itrs.net.

Frank, 2001, Proc. IEEE, 89, 288, 10.1109/5.915374

Kim, 2001, IEEE Trans. Electron Devices, 48, 299

Ren, 2000, IEDM Tech. Dig., 718

Lundstrom, 2000

Taur, 2004, IEEE Electron Device Lett., 25, 109, 10.1109/LED.2003.822661

Saint-Martin, 2006, Solid-State Electron., 50, 101, 10.1016/j.sse.2005.10.043

Svizhenko, 2003, J. Appl. Phys., 91, 2354

Assad, 2000, IEEE Trans. Electron Devices, 47, 240, 10.1109/16.817590

Taur, 2000, IEEE Electron Devices Lett., 21, 247

Pei, 2003, IEEE Trans. Electron Devices, 50, 2143

Djeffal, 2005, Semicond. Sci. Technol., 20, 164, 10.1088/0268-1242/20/2/010

Ren, 2000, Superlattices Microstruct., 27, 189

Venugopal, 2002, J. Appl. Phys., 92, 3739, 10.1063/1.1503165

Svizhenko, 2003, J. Appl. Phys., 91, 2354

Svizhenko, 2003, IEEE Trans. Electron Devices, 50, 1466, 10.1109/TED.2003.813503

Datta, 2000, Superlattices Microstruct., 28, 278, 10.1006/spmi.2000.0920

Venugopal, 2003, J. Appl. Phys., 93, 5625, 10.1063/1.1563298

Z. Ren, Nanoscale MOSFETS: physics, simulation and design, PhD thesis, Purdue University, West Lafayette, IN, 2001.

Van Halen, 1985, J. Appl. Phys., 59, 5274

Billings, 1995, J. Neural Netw., 8, 8905, 10.1016/0893-6080(95)00029-Y

Cichocki, 1993

Bishop, 1997

Nabney, 1999

Reddy, 2004, Microelectron. J., 35, 765, 10.1016/j.mejo.2004.06.003