Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS)

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Sao Thien Ngo1, Chungsying Lu2, Fu‐Gow Tarntair2, Sheng-Ti Chung2, Tian-Li Wu1, Ray–Hua Horng2
1International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
2Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Tóm tắt

AbstractIn this work, we demonstrated Ga2O3-based power MOSFETs grown on c-plane sapphire substrates using in-situ TEOS doping for the first time. The β-Ga2O3:Si epitaxial layers were formed by the metalorganic chemical vapor deposition (MOCVD) with a TEOS as a dopant source. The depletion-mode Ga2O3 power MOSFETs are fabricated and characterized, showing the increase of the current, transconductance, and breakdown voltage at 150 °C. In addition, the sample with the TEOS flow rate of 20 sccm exhibited a breakdown voltage of more than 400 V at RT and 150 °C, indicating that the in-situ Si doping by TEOS in MOCVD is a promising method for Ga2O3 power MOSFETs.

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