Degradation of high-power semiconductor quantum-well lasers

O. I. Koval1, А. Г. Ржанов2, G. A. Solovyev1
1National Research University Moscow Power Engineering Institute, ul. Krasnokazarmennaya 14, Moscow, 111250, Russia
2Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/2, Moscow, 119991, Russia

Tóm tắt

Từ khóa


Tài liệu tham khảo

V.V. Kabanov, Ye.V. Lebiadok, G.I. Ryabtsev, A.S. Smal, M.A. Shchemelev, D.A. Vinokurov, S.O. Slipchenko, Z.N. Sokolova, and I.S. Tarasov, “Radiative and Nonradiative Recombination in the Active Layers of High-Power InGaAs/GaAs/AlGaAs Laser Diodes,” Semiconductors. 46(10), 1316 (2012).

Z.N. Sokolova, I.S. Tarasov, and L.V. Asryan, “Capture of Charge Carriers and Output Power of a Quantum Well Laser,” Semiconductors. 45(11), 1494 (2011).

D.R. Miftakhutdinov, A.P. Bogatov, and A.E. Drakin, “Catastrophic Optical Degradation of the Output Facet of High-Power Single-Transverse-Mode Diode Lasers. 1. Physical Model,” Quantum Electron. 40(7), 583 (2010).

I.V. Akimova, A.P. Bogatov, A.E. Drakin, and V.P. Konyaev, “Dynamics of the Optical Damage of Output Mirrors of Ridge Semiconductor Lasers Based on Strained Quantum-Well Heterostructures,” Quantum Electron. 28(7), 629 (1998).

Z.N. Sokolova, I.S. Tarasov, and L.V. Asryan, “Effect of the Number of Quantum Wells in the Active Region on the Linearity of the Light-Current Characteristic of a Semiconductor Laser,” Semicond. 46(8), 1044 (2012).

M.P.C.M. Krijn, “Heterojunction Band Offsets and Effective Masses in III–V Quaternary Alloys,” Semicond. Sci. Technol. 6, 27 (1991).

M.M. Tashima, L. W. Cook, and G.E. Stillman, “Minority Carrier Diffusion Lengths in Liquid Phase Epitaxial InGaAsP and InGaAs,” J. Electron. Mater. 11(4), 831 (1982).

V.V. Kurylev, A.S. Logginov, and K.Ya. Senatorov, “On the Superradiance Spectra of Injection Lasers and Distribution of Inhomogeneities along p-n Junction,” JETP Lett. 8(6), 194 (1968).