Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures

Microelectronic Engineering - Tập 59 - Trang 399-404 - 2001
Th Dittrich1, T Bitzer2, T Rada2, N.V Richardson2, V.Yu Timoshenko1,3, J Rappich4, F Koch1
1Physik Department E16, Technische Universität München, D-85748 Garching, Germany
2School of Chemistry, St. Andrews University, St. Andrews, Fife KY16 9ST, UK
3Faculty of Physics, M.V. Lomonosov Moscow State University, 119899 Moscow, Russia
4Abteilung Silizium-Photovoltaik, Hahn-Meitner-Institut, Kekuléstr. 5, D-12489 Berlin, Germany

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Microelectronic Engineering

Tập 59

399-404

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