Defect passivation on cast-mono crystalline screen-printed cells
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Takahashi I, Usami N, Kutsukake K, Stokkan G, Morishita K, Nakajima K. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed. Journal of Crystal Growth, 2010, 312(7): 897–901
Yang K, Schwuttke G H, Ciszek T F. Structural and electrical characterization of crystallographic defects in silicon ribbons. Journal of Crystal Growth, 1980, 50(1): 301–310
Gu X, Yu X, Guo K, Chen L, Wang D, Yang D. Seed-assisted cast quasi-single crystalline silicon for photovoltaic application: towards high efficiency and low cost silicon solar cells. Solar Energy Materials and Solar Cells, 2012, 101(2): 95–101
Breitenstein O, Rakotoniaina J P, Al Rifai M H, Werner M. Shunt types in crystalline silicon solar cells. Progress in Photovoltaics: Research and Applications, 2004, 12(7): 529–538
Hanoka J, Bell O. Electron-beam-induced currents in semiconductors. Annual Review of Materials Science, 1981, 11(1): 353–380
Sopori B, Zhang Y, Ravindra N M. Silicon device processing in Hambients: H-diffusion mechanisms and influence on electronic properties. Journal of Electronic Materials, 2001, 30(12): 1616–1627
Haunschild J, Glatthaar M, Demant M, Nievendick J, Motzko M, Rein S, Weber E R. Quality control of as-cut multicrystalline silicon wafers using photoluminescence imaging for solar cell production. Solar Energy Materials & Solar Cells, 2010, 94(12): 2007–2012
Sopori B. Silicon solar-cell processing for minimizing the influence of impurities and defects. Journal of Electronic Materials, 2002, 31(10): 972–980
Sopori B L, Deng X, Benner J P, Rohatgi A, Sana P, Estreicher S K, Park Y K, Robertson M A. Hydrogen in silicon: a discussion of diffusion and passivation mechanisms. In: IEEE 1st World Conference on Photovoltaic Energy, 1994, 2(95): 159–169
Divigalpitiya W M R, Morrison S R, Vercruysse G, Praet A, Gomes W P. Hydrogen passivation of dislocations in silicon. Solar Energy Materials, 1987, 15(2): 141–151
Dubé C, Hanoka J I. Hydrogen passivation of dislocations in silicon. Applied Physics Letters, 1984, 45(10): 1135–1137
Weronek K, Weber J, Queisser H J. Hydrogen passivation of the dislocation-related D-band luminescence in silicon. physica status solidi (a), 1993, 137(2): 543–548
Benton J L, Doherty C J, Ferris S D, Flamm D L, Kimerling L C, Leamy H J. Hydrogen passivation of point defect in silicon. Applied Physics Letters, 1980, 36(8): 670–671
Hallam B, Sugianto A, Mai L, Xu G Q, Chan C, Abbott M, Wenham S, Uruena A, Aleman M, Poortmans J. Hydrogen passivation of laser-induced defects for silicon solar cells. In: Proceedings of IEEE 40th Photovoltaic Specialist Conference, 2014
Abbott M, Cousins P, Chen F, Cotter J. Laser-induced defects in crystalline silicon solar cells. In: Proceedings of IEEE Photovoltaic Specialist Conference, 2005
Tan J, Cuevas A, Macdonald D, Trupke T, Bardos R, Roth K. On the electronic improvement of multi-crystalline silicon via gettering and hydrogenation. Progress in Photovoltaics: Research and Applications, 2008, 16(2): 129–134
Martinuzzi S, Périchaud I, Warchol F. Hydrogen passivation of defects in multicrystalline silicon solar cells. Solar Energy Materials and Solar Cells, 2003, 80(3): 343–353
Sheoran M, Upadhyaya A, Rohatgi A. Bulk lifetime and efficiency enhancement due to gettering and hydrogenation of defects during cast multicrystalline silicon solar cell fabrication. Solid-State Electronics, 2008, 52(5): 612–617
Song L, Wenham A, Wang S, Hamer P, Ahmmed M S, Hallam B, Mai L, Abbott M, Hawkes E R, Chong A M, Wenham S R. Laser enhanced hydrogen passivation of silicon wafers. International Journal of Photoenergy, 2015, 193892
Van de Walle C G, Denteneer P J H, Bar-Yam Y, Pantelides S T. Theory of hydrogen diffusion and reactions in crystalline silicon. Physical Review B: Condensed Matter and Materials Physics, 1989, 39(15): 10791–10808
Chang K, Chadi D. Hydrogen bonding and diffusion in crystalline silicon. Physical Review B: Condensed Matter and Materials Physics, 1989, 40(17): 11644–11653
Herring C, Johnson N M, Van de Walle C G. Energy levels of isolated interstitial hydrogen in silicon. Physical Review B: Condensed Matter and Materials Physics, 2001, 64(12): 125209
Johnson N M, Herring C. Hydrogen immobilization in silicon p-n junctions. Physical Review B: Condensed Matter and Materials Physics, 1988, 38(2): 1581–1584
Fedders P A. Diffusion of hydrogen in different charge states in realistic models of a-Si:H. Physical Review B: Condensed Matter and Materials Physics, 2002, 66(19): 195308
Hamer P, Hallam B, Wenham R, Abbott M. Manipulation of hydrogen charge states for passivation of P-type wafers in photovoltaics. IEEE Journal of Photovoltaics, 2014, 4(5): 1252–1260
Sadoh T, Tsukamoto K, Baba A, Bai D, Kenjo A, Tsurushima T, Mori H, Nakashima H. Deep level of iron-hydrogen complex in silicon. Journal of Applied Physics, 1997, 82(8): 3828–3831
Hallam B J, Hamer P G, Wenham S R, Abbott M A, Sugianto A, Wenham A M, Chan C E, Xu G Q, Kraiem J, Degoulange J, Einhaus R. Advanced bulk defect passivation for silicon solar cells. IEEE Journal of Photovoltaics, 2014, 4(1): 88–95
Nakayashiki K, Rohatgi A, Ostapenko S, Tarasov I. Minority-carrier lifetime enhancement in edge-defined film-fed grown Si through rapid thermal processing-assisted reduction of hydrogen-defect dissociation. Journal of Applied Physics, 2005, 97(2): 024504
Narasimha S, Rohatgi A, Weeber A W. An optimized rapid aluminum back surface field technique for silicon solar cells. IEEE Transactions on Electron Devices, 1999, 46(7): 1363–1370
del Alamo J, Eguren J, Luque A. Operating limits of Al-alloyed high–low junctions for BSF solar cells. Solid-State Electron Devices, 1981, 24(5): 415–420
Cheek G C, Mertens R P, Van Overstraeten R, Frisson L. Thick-film metallization for solar cell applications. IEEE Transactions on Electron Devices, 1984, 31(5): 602–609
Hilali M M, Sridharan S, Khadilkar C, Shaikh A, Rohatgi A, Kim S. Effect of glass frit chemistry on the physical and electrical properties of thick-film Ag contacts for silicon solar cells. Journal of Electronic Materials, 2006, 35(11): 2041–2047
Lennon A, Yao Y, Wenham S. Evolution of metal plating for silicon solar cell metallisation. Progress in Photovoltaics: Research and Applications, 2013, 21(7): 1454–1468
Wilking S, Beckh C, Ebert S, Herguth A, Hahn G. Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes. Solar Energy Materials and Solar Cells, 2014, 131(58): 2–8
Wenham A, Hallam B, Song L, Wang S, Abbott M, Chan C, Hamer P, Azmi A, Barnett A, Wenham S R. Efficiency enhancement for screen printed solar cells on Quasi-Mono wafers through advanced hydrogenation. In: Proceedings of the European PV SEC, 2015
