Damage formation and annealing of ion implantation in Si

Gibbons, 1987, Nucl. Instr. Methods B, 21, 83, 10.1016/0168-583X(87)90803-2 Corbett, 1981, Nucl. Instr. Methods, 182/183, 457, 10.1016/0029-554X(81)90717-5 Jones, 1988, Appl. Phys. A, 45, 1, 10.1007/BF00618760 Rozgonyi, 1989, 147, 3 Tamura, 1989, 147, 143 Tamura, 1988, Japan. J. Appl. Phys., 27, 2209, 10.1143/JJAP.27.2209 Tamura, 1989, Nucl. Instr. Methods B, 37/38, 329, 10.1016/0168-583X(89)90197-3 Horiuchi, 1989, Nucl. Instr. Methods B, 37/38, 285, 10.1016/0168-583X(89)90187-0 Horiuchi, 1989, J. Appl. Phys., 62, 2238, 10.1063/1.342835 Tamura, 1990, J. Crystal Growth, 99, 245, 10.1016/0022-0248(90)90521-L Shukuri, 1987, 295 Tamura, 1988, J. Vacuum Sci. Technol. B, 6, 996, 10.1116/1.584296 Tamura, 1988, Application of Ion Beams in Materials Science, 17 Tamura, 1983, Japan. J. Appl. Phys., 22, L698, 10.1143/JJAP.22.L698 Tamura, 1984, Japan. J. Appl. Phys., 23, L417, 10.1143/JJAP.23.L417 Tamura, 1985, Nucl. Instr. Methods B, 7/8, 858, 10.1016/0168-583X(85)90483-5 Tamura, 1986, Appl. Phys. A, 39, 183, 10.1007/BF00620733 Shukuri, 1988, Nucl. Instr. Methods B, 33, 772, 10.1016/0168-583X(88)90679-9 Madokoro, 1989, Nucl. Instr. Methods B, 39, 511, 10.1016/0168-583X(89)90837-9 Takagi, 1989, Nucl. Instr. Methods B, 37/38, 1, 10.1016/0168-583X(89)90127-4 Ziegler, 1985, Nucl. Instr. Methods B, 6, 272, 10.1016/0168-583X(85)90645-7 Pramanik, 1984, Solid State Technol., 27, 211 Saxena, 1989, 1 Cheung, 1989, Nucl. Instr. Methods B, 37/38, 941, 10.1016/0168-583X(89)90331-5 Tamura, 1986, J. Appl. Phys., 59, 3417, 10.1063/1.336808 Tamura, 1986, Japan. J. Appl. Phys., 25, L474, 10.1143/JJAP.25.L474 Tamura, 1987, Nucl Instr. Methods B, 21, 438, 10.1016/0168-583X(87)90874-3 Tamura, 1987, 563 Tamura, 1989, Nucl. Instr. Methods B, 39, 318, 10.1016/0168-583X(89)90795-7 Tamura, 1989, Appl. Phys. A, 49, 149, 10.1007/BF00616293 M. Tamura, to be published. Ishitani, 1983, Japan. J. Appl. Phys., 22, 329, 10.1143/JJAP.22.329 Molière, 1947, Z. Naturforsch. A, 2, 133, 10.1515/zna-1947-0302 Kinchin, 1955, Rept. Progr. Phys., 18, 1, 10.1088/0034-4885/18/1/301 Sadana, 1983, Nucl. Instr. Methods, 209/210, 743, 10.1016/0167-5087(83)90877-3 Csepregi, 1978, J. Appl. Phys., 49, 3906, 10.1063/1.325397 Csepregi, 1976, Appl. Phys. Letters, 29, 92, 10.1063/1.88980 Olson, 1988, Mater. Sci. Rept., 3, 1, 10.1016/S0920-2307(88)80005-7 Wu, 1984, Appl. Phys. Letters, 44, 782, 10.1063/1.94917 Cerva, 1989, J. Appl. Phys., 66, 4723, 10.1063/1.343832 Seidel, 1985, Nucl. Instr. Methods B, 7/8, 251, 10.1016/0168-583X(85)90562-2 Magee, 1981, Appl. Phys. Letters, 39, 564, 10.1063/1.92795 Celler, 1987, Appl. Phys. Letters, 50, 664, 10.1063/1.98114 Tamura, 1988, Appl. Phys. Letters, 52, 1210, 10.1063/1.99160 Tamura, 1978, Appl. Phys., 17, 31, 10.1007/BF00885027 Wolf, 1969, Silicon Semiconductor Data, 155 Nieh, 1986, J. Appl. Phys., 60, 3114, 10.1063/1.337722 Tsai, 1979, J. Appl. Phys., 50, 188, 10.1063/1.325689 Nieh, 1986, J. Appl. Phys., 60, 7546 Suni, 1984, J. Appl. Phys., 57, 273, 10.1063/1.333957 Tamura, 1977, Phil. Mag., 35, 663, 10.1080/14786437708235998 Melngailis, 1987, J. Vacuum Sci. Technol. B, 5, 469, 10.1116/1.583937 Shukuri, 1984, Japan. J. Appl. Phys., 23, L543, 10.1143/JJAP.23.L543 Lee, 1986, Appl. Phys. Letters, 48, 668, 10.1063/1.96738 Shukuri, 1987, IEEE Trans. Electron Devices, 34, 1264, 10.1109/T-ED.1987.23080 Reuss, 1985, J. Vacuum Sci. Technol. B, 3, 62, 10.1116/1.583292 Reuss, 1986, J. Vacuum Sci. Technol. B, 4, 290, 10.1116/1.583315 Chu, 1986, J. Vacuum Sci. Technol. B, 4, 375, 10.1116/1.583335 Clark, 1988, J. Vacuum Sci. Technol. B, 6, 1006, 10.1116/1.584336 Hamadeh, 1985, J. Vacuum Sci. Technol. B, 3, 91, 10.1116/1.583298 Ishitani, 1984, J. Vacuum Sci. Technol. A, 2, 1365, 10.1116/1.572410 Umemura, 1988, J. Vacuum Sci. Technol. A, 6, 2457, 10.1116/1.575572 Ichikawa, 1982, Japan. J. Appl. Phys., 21, 145, 10.1143/JJAP.21.145 Mayer, 1970, Ion Implantation in Semiconductors, 100 Lambart, 1981, Phil. Mag., 44, 1043, 10.1080/01418618108235793 Seliger, 1979, J. Vacuum Sci. Technol., 16, 1610, 10.1116/1.570253 Seliger, 1982, Japan. J. Appl. Phys., 21, 3, 10.7567/JJAPS.21S1.3 Tokuyama, 1978, Japan. J. Appl. Phys., 17, 1301, 10.1143/JJAP.17.1301 Morehead, 1972, J. Appl. Phys., 43, 1112, 10.1063/1.1661223 Brown, 1983, 1738A Bamba, 1985, Japan. J. Appl. Phys., 24, L6, 10.1143/JJAP.24.L6 Steckl, 1989, 147, 161 Chadderton, 1970, Radiation Effects, 6, 445, 10.1080/00337577008235038 Chadderton, 1971, Radiation Effects, 7, 129, 10.1080/00337577108232573 Eisen, 1970, Radiation Effects, 6, 459 Crowder, 1971, 63 Holland, 1985, Radiation Effects, 90, 125, 10.1080/00337578508222524 Morehead, 1970, Radiation Effects, 6, 27, 10.1080/00337577008235042 Dennis, 1978, J. Appl. Phys., 49, 1119, 10.1063/1.325049 Vook, 1970, Radiation Effects, 6, 11, 10.1080/00337577008235040 Hart, 1979, Appl. Phys. Letters, 35, 865, 10.1063/1.90986 Watkins, 1965, Radiation Damage in Semiconductors, 97 Brice, 1975, Vol. 1 Wong, 1987, Nucl. Instr. Methods B, 21, 447, 10.1016/0168-583X(87)90875-5 Skorupa, 1987, Nucl. Instr. Methods B, 19/20, 335, 10.1016/S0168-583X(87)80068-X Byrne, 1982, Appl. Phys. Letters, 41, 537, 10.1063/1.93581 Rai, 1987, Appl. Phys. Letters, 51, 172, 10.1063/1.98912 Prussin, 1985, J. Appl. Phys., 57, 180, 10.1063/1.334840 Vook, 1973, 60 Nakata, 1981, Japan. J. Appl. Phys., 20, 2211, 10.1143/JJAP.20.2211 Mazzone, 1986, Phys. Stat. Sol., 95a, 149, 10.1002/pssa.2210950118 Servidori, 1987, J. Appl. Phys., 61, 1834, 10.1063/1.338026 Yajima, 1989, Mater. Sci. Forum, 38–41, 1227, 10.4028/www.scientific.net/MSF.38-41.1227 Holland, 1988, Appl. Phys. Letters, 53, 1282, 10.1063/1.99998 Zhang, 1990, Nucl. Instr. Methods B, 48, 425, 10.1016/0168-583X(90)90153-L Davidson, 1970, Radiation Effects, 6, 33, 10.1080/00337577008235043 Bicknell, 1970, Radiation Effects, 6, 45, 10.1080/00337577008235044 Davidson, 1970, 238 Seshan, 1975, Radiation Effects, 26, 31, 10.1080/00337577508237416 Tamura, 1973, Appl. Phys. Letters, 23, 651, 10.1063/1.1654779 Matthews, 1973, Phil. Mag., 27, 1313, 10.1080/14786437308226889 Sanders, 1969, Phil. Mag., 20, 881, 10.1080/14786436908228058 Wu, 1977, J. Appl. Phys., 48, 3747, 10.1063/1.324293 Fairfield, 1967, J. Appl. Phys., 38, 3148, 10.1063/1.1710079 Akasaka, 1973, J. Appl. Phys., 44, 220, 10.1063/1.1661865 Pelous, 1974, 439 Narayan, 1981, 191 Rai, 1987, Nucl. Instr. Methods B, 21, 83, 10.1016/0168-583X(87)90879-2 EerNisse, 1971, Appl. Phys. Letters, 18, 581, 10.1063/1.1653549 Narayan, 1972, J. Appl. Phys., 43, 4862, 10.1063/1.1661038 Peter, 1988, J. Appl. Phys., 64, 2696, 10.1063/1.341610 Kennedy, 1977, J. Appl. Phys., 48, 4241, 10.1063/1.323409 Sands, 1984, 531 Krimmel, 1981, Phys. Stat. Sol., 66a, 565, 10.1002/pssa.2210660219 Prussin, 1961, J. Appl. Phys., 32, 1876, 10.1063/1.1728256 Jain, 1974, Phys. Stat. Sol., 25a, 125, 10.1002/pssa.2210250109 Leory, 1987, Phil. Mag. B, 55, 159, 10.1080/13642818708211202 Wong, 1988, Appl. Phys. Letters, 52, 1023, 10.1063/1.99233 Wong, 1989, 147, 97 Wong, 1989, Nucl. Instr. Methods B, 37/38, 970, 10.1016/0168-583X(89)90336-4 Buck, 1972, Appl. Phys. Letters, 21, 485, 10.1063/1.1654228 Ourmazd, 1986, 331 Magee, 1981, Appl. Phys. Letters, 38, 891, 10.1063/1.92218 Magee, 1981, Appl. Phys. Letters, 39, 260, 10.1063/1.92665 Wong, 1988, Appl. Phys. Letters, 52, 889, 10.1063/1.99263 R.S. Hockett, private communication. Shimizu, 1989, 181 Shimura, 1981, J. Crystal Growth, 54, 588, 10.1016/0022-0248(81)90518-2 Takano, 1973, 469 Mikkelsen, 1986, 19 Sumino, 1986, 369 Kishinno, 1982, Japan. J. Appl. Phys., 21, 1, 10.1143/JJAP.21.1 Windisch, 1988, Phil. Mag., 58, 435, 10.1080/01418618808209936 T. Ishitani, private communication.