Current Issues of High-Pressure Bridgman Growth of Semi-Insulating CdZnTe

Springer Science and Business Media LLC - Tập 487 - 1997
Csaba Szeles1, E.E. Eissler1
1eV Products a division of II-VI, Inc., Saxonburg, USA

Tóm tắt

AbstractThe availability of large-size, detector-grade CdZnTe crystals in large volume and at affordable cost is a key to the further development of radiation-detector applications based on this II-VI compound. The high pressure Bridgman technique that supplies the bulk of semiinsulating CdZnTe crystals used in X-ray, γ-ray detector and imaging devices at present is hampered by material issues that limit the yield of large-size and high-quality crystals. These include ingot cracking, formation of pipes, material homogeneity and the reproducibility of the material from growth to growth. The incorporation of macro defects in the material during crystal growth poses both material quality limitations and technological problems for detector fabrication. The effects of macro defects such as Te inclusions and pipes on the charge-transport properties of CdZnTe are discussed in this paper. Growth experiments designed to study the origin and formation of large defects are described. The importance of material-crucible interactions and control of thermodynamic parameters during crystal growth are also addressed. Opportunities for growth improvements and yield increases are identified.

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Tài liệu tham khảo

10.1007/BF02655007

10.1016/0168-9002(96)00026-5

8 Toney J.M. , talk at the 5th Symposium on Room-Temperature Semiconductor X-ray, Gamma-ray and Neutron Detectors, Sandia, March 1997.

15 Doty F.P. , Digirad, Inc., private communication.

James, 1997, Semiconductors and Semimetals, 43, 335

Zanio, 1978, Semiconductors and Semimetals, 13, 103

10.1006/jssc.1993.1049

10.1016/0022-0248(92)90707-P

10.1117/12.277702

10.1116/1.586275

10.1063/1.1663661

10.1109/TNS.1976.4328231

14 Fougeres P. , Hage-Ali M. , Koebel J.M. , Sieffert P. , Hassan S. , Lusson A. , Triboulet R. , Marrakchi G. , Zerrai A. , Cherkaoui K. , Adhiri R. , Bremond G. , Kaitasov O. , Ruault M.O. , and Crestou J. , 6th Int. Conf. on II-VI Compounds, Grenoble, France 1997.

10.1016/0022-0248(94)90365-4

10.1016/0921-5107(93)90005-8

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Springer Science and Business Media LLC

Tập 487

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