Crystallization of AgGaS2 melts enriched with Ag2S and Ga2S3

Crystal Research and Technology - Tập 43 Số 4 - Trang 409-412 - 2008
К. А. Кох, E. F. Sinyakova1, A. A. Politov2
1Institute of geology and mineralogy SB RAS, 3, Koptyuga ave., Novosibirsk 630090, Russia
2Institute of Solid State Chemistry and Mechanochemistry, SB RAS, 18, Kutateladze Str., Novosibirsk 630128, Russia

Tóm tắt

AbstractIn this work we consider experiments with directed crystallization of melts with slight deviation from stoichiometric composition of AgGaS2. The evolution of melt composition was calculated for both experiments using measured chemical composition of the solid phase. Also the difference in unit cell parameters and luminescence spectra for AgGaS2 grown from the melts was found. Both monocrystal samples and samples synthesized from elementary Ag, Ga and S were used for thermal analyses. Obtained data suggests that different ways of preparing the samples are responsible for defects concentration and thus for so wide range (70°C) of melting temperatures reported in scientific literature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Crystal Research and Technology

Tập 43 Số 4

409-412

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