Johnson, 1965, RCA Rev., 26, 163
W. G. Eversole, Synthesis of Diamond, U.S. Patent 3,030,188, 1958.
Derjaguin, 1975, Sci. Am., 233, 102, 10.1038/scientificamerican1175-102
Spitsyn, 1981, J. Cryst. Growth, 52, 219, 10.1016/0022-0248(81)90197-4
Mania, 1981, Cryst. Res. Technol., 16, 785, 10.1002/crat.2170160709
Matsumoto, 1982, Jpn. J. Appl. Phys., 21, L183, 10.1143/JJAP.21.L183
Matsumoto, 1982, J. Mater. Sci., 17, 3106, 10.1007/BF01203472
Matsumoto, 1983, J. Mater. Sci., 18, 1785, 10.1007/BF00542075
Kamo, 1983, J. Cryst. Growth, 62, 642, 10.1016/0022-0248(83)90411-6
Mitsuda, 1987, J. Mater. Sci., 22, 1537, 10.1007/BF01132374
Matsumoto, 1985, Vol. 1, 79
Matsumoto, 1985, J. Mater. Sci. Lett., 4, 600, 10.1007/BF00720043
Sawabe, 1985, Appl. Phys. Lett., 46, 146, 10.1063/1.95715
Sawabe, 1986, Thin Solid Films, 137, 89, 10.1016/0040-6090(86)90197-5
Kitahama, 1986, Appl. Phys. Lett., 49, 634, 10.1063/1.97063
Kitabatake, 1985, J. Appl. Phys., 58, 1693, 10.1063/1.336066
Hirose, 1986, Jpn. J. Appl. Phys., 25, L519, 10.1143/JJAP.25.L519
Spear, 1987, Earth Miner. Sci., 56, 53
Tsuda, 1986, J. Am. Chem. Soc., 108, 5780, 10.1021/ja00279a019
Boeing, 1982, Plasma Science and Technology, 132
Frenklach, 1988, J. Mater. Res., 3, 133, 10.1557/JMR.1988.0133
Lurie, 1977, Surf. Sci., 65, 476, 10.1016/0039-6028(77)90460-5
Vavilov, 1972, Sov. Phys. Semicond., 6, 741
Vavilov, 1979, Sov. Phys. Semicond., 13, 635
Bell, 1958, Phys. Rev., 111, 1227, 10.1103/PhysRev.111.1227
Glover, 1973, Solid State Electron., 16, 973, 10.1016/0038-1101(73)90196-2
Himpsel, 1980, Solid State Commun., 36, 631, 10.1016/0038-1098(80)90102-7
Geiss, 1987, IEEE Electron. Device Lett., 8, 341, 10.1109/EDL.1987.26653
Prins, 1982, Appl. Phys. Lett., 41, 950, 10.1063/1.93346
Maruska, 1969, Appl. Phys. Lett., 15, 327, 10.1063/1.1652845
Pankove, 1971, J. Lumin., 4, 63, 10.1016/0022-2313(71)90009-3
Pankove, 1973, J. Lumin., 6, 54, 10.1016/0022-2313(73)90094-X
Pankove, 1975, Phys. Rev. Lett., 34, 809, 10.1103/PhysRevLett.34.809
Maruska, 1973, Appl. Phys. Lett., 22, 303, 10.1063/1.1654648
Gershenzon, 1980, Final Tech. Rep.
Seifet, 1983, Cryst. Res. Technol., 18, 383, 10.1002/crat.2170180314
Wickenden, 1971, J. Cryst. Growth, 9, 158, 10.1016/0022-0248(71)90225-9
Ilegems, 1973, J. Phys. Chem. Solids, 34, 885, 10.1016/S0022-3697(73)80090-3
Jacob, 1977, J. Cryst. Growth, 42, 136, 10.1016/0022-0248(77)90186-5
Furtado, 1983, J. Cryst. Growth, 64, 257, 10.1016/0022-0248(83)90132-X
Andreev, 1978, Sov. J. Quantum Electron., 8, 73, 10.1070/QE1978v008n01ABEH008410
Andreev, 1978, Soc. Tech. Phys. Lett., 4, 258
Andreev, 1983, Cryst. Res. Technol., 18, 435, 10.1002/crat.2170180403
Crouch, 1978, J. Mater. Sci., 13, 2358, 10.1007/BF00808049
Liu, 1978, J. Electrochem. Soc., 135, 1161, 10.1149/1.2131641
Monemar, 1980, J. Appl. Phys., 51, 625, 10.1063/1.327318
Seifert, 1974, Phys. Status Solidi A, 23, K39, 10.1002/pssa.2210230149
Seifert, 1980, Phys. Status Solidi A, 61, 493, 10.1002/pssa.2210610221
Seifert, 1981, J. Cryst. Growth, 52, 257, 10.1016/0022-0248(81)90201-3
Gillesen, 1977, Mater. Res. Bull., 12, 955, 10.1016/0025-5408(77)90018-6
Fremunt, 1981, Cryst. Res. Technol., 16, 1257, 10.1002/crat.19810161107
Adomin, 1981, Inorg. Mater., USSR, 17, 1187
Kuznetson, 1982, Sov. Microelectron., 11, 214
Karpinski, 1984, J. Cryst. Growth, 66, 1, 10.1016/0022-0248(84)90070-8
Logan, 1972, J. Electrochem. Soc., 119, 1727, 10.1149/1.2404088
Madar, 1975, J. Cryst. Growth, 31, 197, 10.1016/0022-0248(75)90131-1
Knights, 1978, J. Appl. Phys., 49, 1291, 10.1063/1.325024
Kawabata, 1984, J. Appl. Phys., 56, 2367, 10.1063/1.334277
Hashimoto, 1984, J. Cryst. Growth, 68, 163, 10.1016/0022-0248(84)90412-3
Kahn, 1983, Appl. Phys. Lett., 42, 430, 10.1063/1.93953
Dobrynin, 1979, Khim. Vys. Energ., 13, 161
Chu, 1971, J. Electrochem. Soc., 118, 1200, 10.1149/1.2408280
Pankove, 1973, J. Lumin., 7, 114, 10.1016/0022-2313(73)90062-8
Andrews, 1975, J. Electrochem. Soc., 122, 1273, 10.1149/1.2134442
Born, 1980, J. Mater. Sci., 15, 3003, 10.1007/BF00550368
Eremin, 1982, Russ. J. Phys. Chem., 56, 788
Gotoh, 1981, Jpn. J. Appl. Phys., 20, L545, 10.1143/JJAP.20.L545
Matsubara, 1980, ISA Trans., 5, 137
Matsubara, 1983, Jpn. J. Appl. Phys., 22, 511, 10.1143/JJAP.22.511
Yoshida, 1983, Appl. Phys. Lett., 42, 427, 10.1063/1.93952
Yoshida, 1983, J. Vac. Sci. Technol. B, 1, 250, 10.1116/1.582496
Gershenzon, 1983, Final Tech. Rep.
Shuskas, 1974, 5th Semi-Annu. Rep.
Lakshmi, 1980, Thin Solid Films, 74, 77, 10.1016/0040-6090(80)90441-1
Lakshmi, 1981, Thin Solid Films, 83, L137, 10.1016/0040-6090(81)90597-6
Hariu, 1978, Appl. Phys. Lett., 32, 252, 10.1063/1.90009
Matsushita, 1981, Thin Solid Films, 80, 243, 10.1016/0040-6090(81)90229-7
Karpinski, 1984, J. Cryst. Growth, 66, 1, 10.1016/0022-0248(84)90070-8
Elwell, 1984, J. Cryst. Growth, 66, 45, 10.1016/0022-0248(84)90075-7
Sano, 1976, Jpn. J. Appl. Phys., 15, 1943, 10.1143/JJAP.15.1943
Pankove, 1976, J. Appl. Phys., 47, 5387, 10.1063/1.322566
Nishino, 1980, J. Electrochem. Soc., 137, 2674, 10.1149/1.2129570
Nishino, 1983, Appl. Phys. Lett., 42, 460, 10.1063/1.93970
Suzuki, 1984, J. Cryst. Growth, 70, 287, 10.1016/0022-0248(84)90275-6
Addamiano, 1984, J. Cryst. Growth, 70, 291, 10.1016/0022-0248(84)90276-8
Sasaki, 1984, Appl. Phys. Lett., 45, 73
Liaw, 1985, J. Electrochem. Soc., 132, 642, 10.1149/1.2113921
Rai-Choudhury, 1969, J. Electrochem. Soc., 116, 1140
Berman, 1972, AFCRL Rep. 72–0737
Bartlett, 1969, Mater. Res. Bull., 4, S341
Long, 1970, Pot. Spektros., 29, 388
von Muench, 1978, J. Electrochem. Soc., 125, 294, 10.1149/1.2131431
Dunlap, 1969, Appl. Phys. Lett., 15, 311, 10.1063/1.1652838
Marsh, 1970, Radiat. Eff., 6, 301, 10.1080/00337577008236310
Addamiano, 1972, J. Electrochem. Soc., 119, 1355, 10.1149/1.2403997
Kalinina, 1980, Sov. Phys. Semicond., 14, 652
Yoshida, 1985, Appl. Phys. Lett., 46, 766, 10.1063/1.95502
Yoshida, 1986, J. Appl. Phys., 60, 2889
Daiman, 1986, Jpn. J. Appl. Phys., 25, L592, 10.1143/JJAP.25.L592
Kurukawa, 1986, Appl. Phys. Lett., 48, 1536, 10.1063/1.96860
Suzuki, 1986, Extended Abstracts of the 18th Int. Conf. on Solid State Devices and Materials, 101
Kondo, 1986, IEEE Electron. Device Lett., 7, 404, 10.1109/EDL.1986.26417
Kim, 1987, J. Electrochem. Soc., 134, 2269, 10.1149/1.2100869
Shibahara, 1987, Appl. Phys. Lett., 50, 1888, 10.1063/1.97676
Pirouz, 1987, Appl. Phys. Lett., 50, 221, 10.1063/1.97667
Maszara, 1986, J. Appl. Phys., 60, 2310, 10.1063/1.337140
Carter, 1986, J. Mater. Res., 1, 811, 10.1557/JMR.1986.0811
Kong, 1986, Appl. Phys. Lett., 49, 1074, 10.1063/1.97479