Correlations between the thermoelectric power and Hall effect of Sn or Ge doped In2O3 semiconductors

Chopra, 1983, Thin Solid Films, 102, 1, 10.1016/0040-6090(83)90256-0 Bharadwaj, 1981, Sol. Cells, 5, 39, 10.1016/0379-6787(81)90014-4 Hamberg, 1986, J. Appl. Phys., 60, 123, 10.1063/1.337534 Jin, 1988, J. Appl. Phys., 64, 5117, 10.1063/1.342419 Stjerna, 1980, Appl. Phys. Lett., 57, 1989, 10.1063/1.104150 Wen, 1992, Mater. Sci. Eng., B14, 115, 10.1016/0921-5107(92)90339-B Wen, 1993, J. Solid State Chem., 101, 203, 10.1016/0022-4596(92)90176-V Wen, 1992, Phys. Status Solidi A, 130, 408, 10.1002/pssa.2211300218 Campet, 1993, Mater. Sci. Eng. B, 19, 285, 10.1016/0921-5107(93)90200-7 Wen, 1992 Zhang, 1982, Inorg. Chem., 21, 3886, 10.1021/ic00141a005 Fistul, 1969 Fistul, 1969, Heavily Doped Semiconductors, 47 Fistul, 1969, Heavily Doped Semiconductors, 48 Fistul, 1969, Heavily Doped Semiconductors, 140 Fistul, 1969, Heavily Doped Semiconductors, 48 Fistul, 1969, Heavily Doped Semiconductors, 53 Fistul, 1969, Heavily Doped Semiconductors, 104 Fistul, 1969, Heavily Doped Semiconductors, 143 Marfaing, 1984, Interface Semiconducteur-Electrolyte, CNRS, Ecole d'Hiver, Aussois, 10 Remeika, 1964, J. Appl. Phys., 35, 2803, 10.1063/1.1713110 Weiher, 1962, J. Appl. Phys., 33, 2834, 10.1063/1.1702560 Dordor, 1980, Rev. Phys. Appl., 15, 1607, 10.1051/rphysap:0198000150110160700 Fistul, 1969, Heavily Doped Semiconductors, 146 Fistul, 1969, Heavily Doped Semiconductors, 144 Fistul, 1969, Heavily Doped Semiconductors, 145