Controlled direct growth of Al<sub>2</sub>O<sub>3</sub>-doped HfO<sub>2</sub> films on graphene by H<sub>2</sub>O-based atomic layer deposition

Physical Chemistry Chemical Physics - Tập 17 Số 5 - Trang 3179-3185
Li Zheng1,2,3,4,5, Xinhong Cheng1,2,3,4,5, Yuehui Yu1,2,3,4,5, Ya‐Hong Xie6,7,8, Xiaolong Li3,9,10, Zhongjian Wang1,2,3,4,5
1Chinese Academy of sciences
2Institute of Microsystem and Information Technology
3P. R. China
4Shanghai 200050
5State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, P. R. China
6California 90095
7Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA
8University of California, Los Angeles
9Shanghai 200061
10Shanghai Synchrotron Radiation Facility, Zhangheng Road 239,Shanghai 200061,P. R. China

Tóm tắt

Al2O3-doped HfO2 with both amorphous state and high relative permittivity was directly deposited on graphene by atomic layer deposition.

Từ khóa


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Thông tin xuất bản

Physical Chemistry Chemical Physics

Tập 17 Số 5

3179-3185

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