Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

Current Applied Physics - Tập 12 - Trang 385-388 - 2012
Sang-Tae Lee1, Byung-Guon Park1, Moon-Deock Kim1, Jae-Eung Oh2, Song-Gang Kim3, Young-Heon Kim4, Woo-Chul Yang5
1Department of Physics, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon, 305-764, Republic of Korea
2Division of Electrical and Computer Engineering, Hanyang University, Ansan city, Kyunggi-do 425-791, Republic of Korea
3Department of Information and Communications, Joongbu University, Chungnam 132-940, Republic of Korea
4Korea Research Institute of Standards and Science, 1 Doryong-Dong, Yuseong-Gu, Daejeon 305-340, Republic of Korea
5Department of Physics, Dongguk University, Pil-Dong, Jung-Gu, Seoul 100-715, Republic of Korea

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Current Applied Physics

Tập 12

385-388

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