Comparison between single- and double-pulse LIBS at different air pressures on silicon target

Applied Physics B - Tập 83 - Trang 651-657 - 2006
K. Amal1, S.H. Elnaby1, V. Palleschi2, A. Salvetti2, M.A. Harith1
1National Institute of Laser Enhanced Science (NILES), Cairo University, Giza, Egypt
2Applied Laser Spectroscopy Laboratory, IPCF-CNR, Pisa, Italy

Tóm tắt

A comparative study between single- and double-pulse laser-induced breakdown spectroscopy (LIBS) was performed on an n-type silicon(111) target. A new mobile double-pulse instrument for LIBS analysis was used for the measurements. The experiment was carried out at different air pressures of 0.7, 470 and 1000 hPa. It has been found that, in the case of double-pulse LIBS, the emission intensities of atomic and ionic lines are strongly enhanced at higher pressures. Using Stark broadening of the atomic lines of silicon, it was found that the electron number densities for single and double pulses are approximately the same (Ne∼1017 cm-3). Plasma excitation and ionization temperatures were determined from a Boltzmann plot. The double-pulse laser-induced plasma was studied at different interpulse delay times of 1, 2, 5, 10, 15, 25 and 50 μs. The results indicated that the interaction between the laser, plasma and target gives higher atomic and ionic intensities at shorter interpulse delay times.

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