Combined Tem and X-Ray Topographic Characterization of InxGa1-xAs/GaAs Strained Layer Systems.

Springer Science and Business Media LLC - Tập 209 - Trang 655-660 - 1990
Michael Dudley1, Gong-Da Yao1, David Paine2, David Howard2, Robert N. Sacks3
1Dept. of Materials Science & Engineering, SUNY at Stony Brook, USA
2Div. of Eng., Brown U., Providence, USA
3United Technologies Research Center, East Hartford, USA

Tóm tắt

Novel application of a combination of TEM and non-destructive synchrotron X-ray topography in both Bragg and grazing Bragg-Laue geometries to the characterization of InxGa1-xAs/GaAs strained layer films is reported. Specialized epilayer lift-off procedures enabled TEM characterization of the defect distributions in macroscopic area films, effectively increasing the field of view of the technique by several orders of magnitude. These lateral distributions correlated well with those observed on both Bragg and grazing Bragg- Laue topographs. Grazing Bragg-Laue images also afforded depth sensitivity. Excellent correlations exist between results obtained with all these techniques for systems with a wide range of In concentrations, corresponding to a broad range of interfacial dislocation densities, although only results for χ=0.085 are presented. This work demonstrates that it is possible to bridge the gap that has traditionally existed between the areas of application of these two generic techniques, in terms of both tolerable defect densities and fields of view. This gap also spans the range of defect densities which is of interest in this and other systems.

Tài liệu tham khảo

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