Chip-scale GaN integration

Progress in Quantum Electronics - Tập 70 - Trang 100247 - 2020
K.-H. Li1, Wai Yuen Fu1, H. W. Choi1
1Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

Tóm tắt

Từ khóa


Tài liệu tham khảo

J. Penning, K. Stober, V. Taylor, M. Yamada, (U.S. Department of Energy, Washington, DC, 2016).

Nakamura, 1991, Novel metalorganic chemical vapor deposition system for GaN growth, Appl. Phys. Lett., 58, 2021, 10.1063/1.105239

Nakamura, 1993, High-power InGaN/GaN double-heterostructure violet light-emitting-diodes, Appl. Phys. Lett., 62, 2390, 10.1063/1.109374

Akasaki, 1991, Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED, J. Lumin., 48, 666, 10.1016/0022-2313(91)90215-H

Amano, 1986, Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer, Appl. Phys. Lett., 48, 353, 10.1063/1.96549

Amano, 1989, P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI), Jpn. J. Appl. Phys., 28, L2112, 10.1143/JJAP.28.L2112

Jang, 2010, White-light-emitting diodes with quantum dot color converters for display backlights, Adv. Mater., 22, 3076, 10.1002/adma.201000525

Anikeeva, 2009, Quantum dot light-emitting devices with electroluminescence tunable over the entire visible spectrum, Nano Lett., 9, 2532, 10.1021/nl9002969

Mair, 1997, Optical properties of GaN/AlGaN multiple quantum well microdisks, Appl. Phys. Lett., 71, 2898, 10.1063/1.120209

Jin, 2000, GaN microdisk light emitting diodes, Appl. Phys. Lett., 76, 631, 10.1063/1.125841

Choi, 2003, Fabrication and performance of parallel-addressed InGaN micro-LED arrays, IEEE Photon. Technol. Lett., 15, 510, 10.1109/LPT.2003.809257

Jin, 2000, InGaN/GaN quantum well interconnected microdisk light emitting diodes, Appl. Phys. Lett., 77, 3236, 10.1063/1.1326479

Choi, 2004, InGaN microring light-emitting diodes, IEEE Photon. Technol. Lett., 16, 33, 10.1109/LPT.2003.818903

Choi, 2006, Honeycomb GaN micro-light-emitting diodes, J. Vac. Sci. Technol. B, 24, 800, 10.1116/1.2184324

Jin, 2001, Size dependence of III-nitride microdisk light-emitting diode characteristics, Appl. Phys. Lett., 78, 3532, 10.1063/1.1376152

Gong, 2010, Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes, J. Appl. Phys., 107, 10.1063/1.3276156

Jiang, 2001, III-nitride blue microdisplays, Appl. Phys. Lett., 78, 1303, 10.1063/1.1351521

Jeon, 2003, A novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array, Phys. Status Solidi, 200, 79, 10.1002/pssa.200303292

Choi, 2004, High-resolution 128 x 96 nitride microdisplay, IEEE Electron. Device Lett., 25, 277, 10.1109/LED.2004.826541

Choi, 2005, Improved current spreading in 370nm AlGaN microring light emitting diodes, Appl. Phys. Lett., 86, 10.1063/1.1861130

Wu, 2004, Micro-pixel design milliwatt power 254 nm emission light emitting diodes, Jpn. J. Appl. Phys., 43, L1035, 10.1143/JJAP.43.L1035

Jeon, 2004, High-density matrix-addressable AlInGaN-based 368-nm microarray light-emitting diodes, IEEE Photon. Technol. Lett., 16, 2421, 10.1109/LPT.2004.835626

Ding, 2019, Micro-LEDs, a manufacturability perspective, Appl. Sci., 9, 1206, 10.3390/app9061206

I.-C. Robin, B. Mourey, Illuminated faceplate and method for producing such an illuminated faceplate, WO Patent 2017/089676 (2017).

Delaporte, 2016, [INVITED] Laser-induced forward transfer: a high resolution additive manufacturing technology, Optic Laser. Technol., 78, 33, 10.1016/j.optlastec.2015.09.022

Woodgate, 2018, P-101: micro-optical systems for micro-LED displays, SID Symp. Dig. Tech. Pap., 49, 1559, 10.1002/sdtp.12285

SasakiPaul K., Schuele J., Ulmer K., Lee J.-J., System and Method for the Fluidic Assembly of Emissive Displays, US Patent 20170133558A1 (2017).

Hu H.-H., Bibl A., Higginson J.A., Hung-fai, Law S., Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer, US Patent 8573469B2 (2013).

Meitl, 2006, Transfer printing by kinetic control of adhesion to an elastomeric stamp, Nat. Mater., 5, 33, 10.1038/nmat1532

Liu, 2018, 66-2: invited paper: PixeLED display for transparent applications, SID Symp. Dig. Tech. Pap., 49, 874, 10.1002/sdtp.12235

Virey, 2018, 45-1: status and prospects of microLED displays, SID Symp. Dig. Tech. Pap., 49, 593, 10.1002/sdtp.12415

Liu, 2019, 23.1: invited paper: heading to ultimate display with MicroLED, SID Symp. Dig. Tech. Pap., 50, 10.1002/sdtp.13446

Virey, 2019, 11-3: overlooked challenges for microLED displays, SID Symp. Dig. Tech. Pap., 50, 129, 10.1002/sdtp.12872

Bibl A., Sakariya K.V., Griggs C.R., Perkins J.M., Light emitting diode display with redundancy scheme, US Patent 9,865,832 B2 (2018).

Choi, 2009, Semiconductor color-tunable broadband light sources and full-color microdisplays, US Patent 7982228

Cheung, 2013, Color-tunable and phosphor-free white-light multilayered light-emitting diodes, IEEE Trans. Electron. Dev., 60, 333, 10.1109/TED.2012.2228866

Hui, 2009, Design of vertically-stacked polychromatic light-emitting diodes, Optic Express, 17, 9873, 10.1364/OE.17.009873

El-Ghoroury, 2014

Damilano, 2001, Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells, Jpn. J. Appl. Phys., 40, L918, 10.1143/JJAP.40.L918

Chen, 2002, Nitride-based cascade near white light-emitting diodes, IEEE Photon. Technol. Lett., 14, 908, 10.1109/LPT.2002.1012381

Motokazu, 2002, Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well, Jpn. J. Appl. Phys., 41, L246, 10.1143/JJAP.41.L246

Huang, 2007, Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN∕GaN quantum wells, Appl. Phys. Lett., 90, 151122, 10.1063/1.2723197

Lee, 2008, Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions, Appl. Phys. Lett., 92

Lu, 2009, Phosphor-free monolithic white-light LED, IEEE J. Sel. Top. Quant. Electron., 15, 1210, 10.1109/JSTQE.2009.2013184

Li, 2003, Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths, J. Appl. Phys., 94, 2167, 10.1063/1.1591051

Horng-Shyang, 2006, White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode, IEEE Photon. Technol. Lett., 18, 1430, 10.1109/LPT.2006.877551

Li, 2013, Phosphor-free, color-tunable monolithic InGaN light-emitting diodes, APEX, 6, 102103, 10.7567/APEX.6.102103

Wright, 2013, Multi-colour nanowire photonic crystal laser pixels, Sci. Rep., 3, 2982, 10.1038/srep02982

Hongjian, 2013, Phosphor-free, color-tunable monolithic InGaN light-emitting diodes, APEX, 6, 102103, 10.7567/APEX.6.102103

El-Ghoroury, 2016, Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers, AIP Adv., 6, 10.1063/1.4959897

Park, 2008, Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells, Appl. Phys. Lett., 92, 10.1063/1.2890492

Kong, 2016, Color tunable monolithic InGaN/GaN LED having a multi-junction structure, Optic Express, 24, A667, 10.1364/OE.24.00A667

Damilano, 2008, Monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter, Appl. Phys. Lett., 93, 101117, 10.1063/1.2982097

Damilano, 2012, Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter, Phys. Status Solidi, 209, 465, 10.1002/pssa.201100494

Chua, 2008, Quantum dots excited InGaN/GaN phosphor-free white LEDs, Phys. Status Solidi C, 5, 2189, 10.1002/pssc.200778535

Li, 2016, Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots, Sci. Rep., 6, 35217, 10.1038/srep35217

Jahangir, 2014, Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes, Appl. Phys. Lett., 105, 111117, 10.1063/1.4896304

Kuykendall, 2007, Complete composition tunability of InGaN nanowires using a combinatorial approach, Nat. Mater., 6, 951, 10.1038/nmat2037

Lin, 2010, InGaN/GaN nanorod array white light-emitting diode, Appl. Phys. Lett., 97

Guo, 2010, Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy, Nano Lett., 10, 3355, 10.1021/nl101027x

Hong, 2011, Visible-color-tunable light-emitting diodes, Adv. Mater., 23, 3284, 10.1002/adma.201100806

Nguyen, 2011, Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon, Nanotechnology, 22, 445202, 10.1088/0957-4484/22/44/445202

Albert, 2013, Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns, Appl. Phys. Lett., 102, 181103, 10.1063/1.4804293

Wang, 2014, Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon, Optic Express, 22, A1768, 10.1364/OE.22.0A1768

Sekiguchi, 2010, Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate, Appl. Phys. Lett., 96, 231104, 10.1063/1.3443734

Kishino, 2013, Monolithic integration of InGaN-based nanocolumn light-emitting diodes with different emission colors, APEX, 6

Ra, 2016, Full-color single nanowire pixels for projection displays, Nano Lett., 16, 4608, 10.1021/acs.nanolett.6b01929

Nguyen, 2013, Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes, Nano Lett., 13, 5437, 10.1021/nl4030165

Kishino, 2015, Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns, Nanotechnology, 26, 225602, 10.1088/0957-4484/26/22/225602

Waag, 2011, The nanorod approach: GaN NanoLEDs for solid state lighting, Phys. Status Solidi C, 8, 2296, 10.1002/pssc.201000989

Funato, 2008, Monolithic polychromatic light-emitting diodes based on InGaN microfacet quantum wells toward tailor-made solid-state lighting, APEX, 1

Kim, 2013, Polychromatic white LED using GaN nano pyramid structure, Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting, XVII,, 86410E

Tchoe, 2014, Variable-color light-emitting diodes using GaN microdonut arrays, Adv. Mater., 26, 3019, 10.1002/adma.201305684

Choi, 2013, White nanoLED without requiring color conversion, US Patent, 9401453

Fu, 2018, Explaining relative spectral red shifts in InGaN/GaN micropillars, Optica, 5, 765, 10.1364/OPTICA.5.000765

Wu, 2009, Size-dependent strain relaxation and optical characteristics of InGaN/GaN nanorod LEDs, IEEE J. Sel. Top. Quant. Electron., 15, 1226, 10.1109/JSTQE.2009.2015583

Bocklin, 2010, Computational study of an InGaN/GaN nanocolumn light-emitting diode, Phys. Rev. B, 81, 155306, 10.1103/PhysRevB.81.155306

Wang, 2011, Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods, J. Phys. D Appl. Phys., 44, 395102, 10.1088/0022-3727/44/39/395102

Bai, 2012, Characterization of InGaN-based nanorod light emitting diodes with different indium compositions, J. Appl. Phys., 111, 113103, 10.1063/1.4725417

Chang, 2012, Effects of strains and defects on the internal quantum efficiency of InGaN/GaN nanorod light emitting diodes, IEEE J. Quant. Electron., 48, 551, 10.1109/JQE.2012.2187175

Zhuang, 2014, Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk, J. Appl. Phys., 116, 174305, 10.1063/1.4898685

Ramesh, 2010, Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well, J. Appl. Phys., 107, 114303, 10.1063/1.3369434

Kawakami, 2010, Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching, J. Appl. Phys., 107, 10.1063/1.3280032

Rivera, 2007, Strain-confinement mechanism in mesoscopic quantum disks based on piezoelectric materials, Phys. Rev. B, 75, 10.1103/PhysRevB.75.045316

Feng, 2016, Monolithic broadband InGaN light-emitting diode, ACS Photonics, 3, 1294, 10.1021/acsphotonics.6b00269

Chung, 2017, Monolithic integration of individually addressable light-emitting diode color pixels, Appl. Phys. Lett., 110, 111103, 10.1063/1.4978554

Teng, 2016, Strain-induced red-green-blue wavelength tuning in InGaN quantum wells, Appl. Phys. Lett., 108, 10.1063/1.4942190

Choi, 2019, Colourful chip-scale microLED displays, Compd. Semicond., 25, 18

Choi H.W., Fu W. Y., Strain-inducing Nanostructures for Spectral Red-shifting of Light Emitting Devices, US Provisional Patent 62/470,298 (2017).

Choi, 2018, Making monolithic integrated systems with GaN, Compd. Semicond., 24, 54

Lee, 2006, White light emission of monolithic carbon-implanted InGaN-GaN light-emitting diodes, IEEE Photon. Technol. Lett., 18, 2029, 10.1109/LPT.2006.883322

Huang, 2014, Defect-induced color-tunable monolithic GaN-based light-emitting diodes, APEX, 7, 102102, 10.7567/APEX.7.102102

Ng, 1999, Distributed Bragg reflectors based on AlN/GaN multilayers, Appl. Phys. Lett., 74, 1036, 10.1063/1.123447

Ng, 2000, High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy, Appl. Phys. Lett., 76, 2818, 10.1063/1.126483

Krestnikov, 1999, Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser, Appl. Phys. Lett., 75, 1192, 10.1063/1.124638

Carlin, 2005, Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials, Phys. Status Solidi B, 242, 2326, 10.1002/pssb.200560968

Carlin, 2003, High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN, Appl. Phys. Lett., 83, 668, 10.1063/1.1596733

Zhang, 2010, A conductivity-based selective etching for next generation GaN devices, Phys. Status Solidi B, 247, 1713, 10.1002/pssb.200983650

Park, 2013, High diffuse reflectivity of nanoporous GaN distributed Bragg reflector formed by electrochemical etching, APEX, 6

Zhang, 2015, Mesoporous GaN for photonic engineering—highly reflective GaN mirrors as an example, ACS Photonics, 2, 980, 10.1021/acsphotonics.5b00216

Lee, 2015, Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector, Optic Express, 23, 11023, 10.1364/OE.23.011023

Zhu, 2017, Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification, Sci. Rep., 7, 45344, 10.1038/srep45344

Mishkat-Ul-Masabih, 2018, Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN, Appl. Phys. Lett., 112, 10.1063/1.5016083

Noda, 2009, Photonic crystal efficiency boost, Nat. Photon., 3, 129, 10.1038/nphoton.2009.15

Oder, 2004, III-nitride blue and ultraviolet photonic crystal light emitting diodes, Appl. Phys. Lett., 84, 466, 10.1063/1.1644050

Wierer, 2004, InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures, Appl. Phys. Lett., 84, 3885, 10.1063/1.1738934

Wierer, 2009, III-nitride photonic-crystal light-emitting diodes with high extraction efficiency, Nat. Photon., 3, 163, 10.1038/nphoton.2009.21

McGroddy, 2008, Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes, Appl. Phys. Lett., 93, 103502, 10.1063/1.2978068

Lai, 2008, Polarized light emission from photonic crystal light-emitting diodes, Appl. Phys. Lett., 92, 243118, 10.1063/1.2938885

Ng, 2008, Photonic crystal light-emitting diodes fabricated by microsphere lithography, Nanotechnology, 19, 255302, 10.1088/0957-4484/19/25/255302

Fu, 2009, Close-packed hemiellipsoid arrays: a photonic band gap structure patterned by nanosphere lithography, Appl. Phys. Lett., 95, 133125, 10.1063/1.3238564

Li, 2011, Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography, J. Appl. Phys., 109

Li, 2012, Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography, Appl. Phys. Lett., 100, 141101, 10.1063/1.3698392

Zhang, 2009, Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting, Appl. Phys. Lett., 95, 261110, 10.1063/1.3276074

Matioli, 2011, Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals, Appl. Phys. Lett., 98, 251112, 10.1063/1.3602319

Li, 2013, III-nitride light-emitting diode with embedded photonic crystals, Appl. Phys. Lett., 102, 181117, 10.1063/1.4804678

Lee, 2009, Polarization-dependent GaN surface grating reflector for short wavelength applications, Optic Express, 17, 22535, 10.1364/OE.17.022535

Ye, 2018, Achromatic flat subwavelength grating lens over whole visible bandwidths, IEEE Photon. Technol. Lett., 30, 955, 10.1109/LPT.2018.2825198

Choi, 2005, Fabrication and evaluation of GaN negative and bifocal microlenses, J. Appl. Phys., 97, 10.1063/1.1857062

Zhang, 2012, InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography, Appl. Phys. Lett., 100

Li, 2013, 1-μm micro-lens array on flip-chip light-emitting diode, Jpn. J. Appl. Phys., 52, 10.7567/JJAP.52.08JH08

Fu, 2009, Geometrical shaping of InGaN light-emitting diodes by laser micromachining, IEEE Photon. Technol. Lett., 21, 1078, 10.1109/LPT.2009.2022751

Wang, 2009, Evaluation of InGaN/GaN light-emitting diodes of circular geometry, Optic Express, 17, 22311, 10.1364/OE.17.022311

Sun, 2013, Shape designing for light extraction enhancement bulk-GaN light-emitting diodes, J. Appl. Phys., 113, 243104, 10.1063/1.4812464

Cheung, 2016, Flexible free-standing III-nitride thin films for emitters and displays, ACS Appl. Mater. Interfaces, 8, 21440, 10.1021/acsami.6b04413

Zhang, 2011, GaN directional couplers for integrated quantum photonics, Appl. Phys. Lett., 99, 161119, 10.1063/1.3656073

Sameshima, 2011, A GaN electromechanical tunable grating on Si substrate, IEEE Photon. Technol. Lett., 23, 281

Jeong, 2008, InGaN/AlGaN ultraviolet light-emitting diode with a Ti3O5/Al2O3Distributed Bragg reflector, Jpn. J. Appl. Phys., 47, 8811, 10.1143/JJAP.47.8811

Lin, 2006, Enhancement of InGaN–GaN indium–tin–oxide flip-chip light-emitting diodes with TiO2–SiO2 multilayer stack omnidirectional reflector, IEEE Photon. Technol. Lett., 18, 2050, 10.1109/LPT.2006.883330

Li, 2011, InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer, J. Appl. Phys., 110

Wu, 2013, Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO nanobowls photonic crystal via self-assembled nanosphere lithography, AIP Adv., 3, 10.1063/1.4823478

Bao, 2007, Improvement of light extraction from patterned polymer encapsulated GaN-based flip-chip light-emitting diodes by imprinting, IEEE Photon. Technol. Lett., 19, 1840, 10.1109/LPT.2007.908731

Choi, 2004, GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses, Appl. Phys. Lett., 84, 2253, 10.1063/1.1690876

Zhu, 2011, Microlens array on flip-chip LED patterned with an ultraviolet micro-pixelated emitter, IEEE Photon. Technol. Lett., 23, 1067, 10.1109/LPT.2011.2154323

Kim, 2005, Strongly enhanced phosphor efficiency in GaInN white light-emitting diodes using remote phosphor configuration and diffuse reflector cup, Jpn. J. Appl. Phys., 44, L649, 10.1143/JJAP.44.L649

Kuo, 2011, Patterned structure of Remote Phosphor for phosphor-converted white LEDs, Optic Express, 19, A930, 10.1364/OE.19.00A930

Lin, 2015, Improvement of light quality by DBR structure in white LED, Optic Express, 23, A27, 10.1364/OE.23.000A27

Fan, 2008, III-nitride micro-emitter arrays: development and applications, J. Phys. D Appl. Phys., 41, 10.1088/0022-3727/41/9/094001

Jiang, 2013, Nitride micro-LEDs and beyond - a decade progress review, Optic Express, 21, A475, 10.1364/OE.21.00A475

Day, 2011, III-Nitride full-scale high-resolution microdisplays, Appl. Phys. Lett., 99, 10.1063/1.3615679

de Brugiere, 2011, A 10 mu m pitch interconnection technology using micro tube insertion into Al-Cu for 3D applications, 1400

Marion, 2016, A room temperature flip-chip technology for high pixel count micro-displays and imaging arrays, 929

Templier, 2018, High-resolution, active-matrix, 10-mu m pixel-pitch GaN LED microdisplays for Augmented Reality applications, 10556

McKendry, 2009, Individually addressable AlInGaN micro-LED arrays with CMOS control and subnanosecond output pulses, IEEE Photon. Technol. Lett., 21, 811, 10.1109/LPT.2009.2019114

McKendry, 2010, High-speed visible light communications using individual pixels in a micro light-emitting diode array, IEEE Photon. Technol. Lett., 22, 1346, 10.1109/LPT.2010.2056360

McKendry, 2012, Visible-light communications using a CMOS-controlled micro-light-emitting-diode array, J. Lightwave Technol., 30, 61, 10.1109/JLT.2011.2175090

Zhang, 2013, 1.5 Gbit/s multi-channel visible light communications using CMOS-controlled GaN-based LEDs, J. Lightwave Technol., 31, 1211, 10.1109/JLT.2013.2246138

Tsonev, 2014, A 3-Gb/s single-LED OFDM-based wireless VLC link using a gallium nitride mu LED, IEEE Photon. Technol. Lett., 26, 637, 10.1109/LPT.2013.2297621

Chun, 2016, LED based wavelength division multiplexed 10 Gb/s visible light communications, J. Lightwave Technol., 34, 3047, 10.1109/JLT.2016.2554145

Ferreira, 2016, High bandwidth GaN-based micro-LEDs for multi-gb/s visible light communications, IEEE Photon. Technol. Lett., 28, 2023, 10.1109/LPT.2016.2581318

Rajbhandari, 2017, A review of gallium nitride LEDs for multigigabit-per-second visible light data communications, Semicond. Sci. Technol., 32, 10.1088/1361-6641/32/2/023001

Cicek, 2014, High performance solar-blind ultraviolet 320 x 256 focal plane arrays based on AlxGa1-xN, IEEE J. Quant. Electron., 50, 591, 10.1109/JQE.2014.2328434

Ngu, 2010, Array of two UV-wavelength detector types, IEEE Trans. Electron. Dev., 57, 1224, 10.1109/TED.2010.2045706

Malinowski, 2011, AlGaN-on-Si-Based 10-mu m pixel-to-pixel pitch hybrid imagers for the EUV range, IEEE Electron. Device Lett., 32, 1561, 10.1109/LED.2011.2163615

Mishra, 2002, AlGaN/GaN HEMTs - an overview of device operation and applications, Proc. IEEE, 90, 1022, 10.1109/JPROC.2002.1021567

Mishra, 2008, GaN-Based RF power devices and amplifiers, Proc. IEEE, 96, 287, 10.1109/JPROC.2007.911060

Saito, 2003, High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior, IEEE Trans. Electron. Dev., 50, 2528, 10.1109/TED.2003.819248

Wu, 2001, Very-high power density AlGaN/GaN HEMTs, IEEE Trans. Electron. Dev., 48, 586, 10.1109/16.906455

Li, 2013, Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate, Appl. Phys. Lett., 102

Li, 2015, High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal, Phys. Status Solidi Appl. Mater. Sci., 212, 1110, 10.1002/pssa.201431660

Liu, 2014, Monolithic integration of AlGaN/GaN HEMT on LED by MOCVD, IEEE Electron. Device Lett., 35, 330, 10.1109/LED.2014.2300897

Liu, 2014, Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors, Appl. Phys. Lett., 104

Tian, 2016, Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays, Optic Express, 24, 699, 10.1364/OE.24.000699

Liu, 2016, Optimization of a common buffer platform for monolithic integration of InGaN/GaN light-emitting diodes and AlGaN/GaN high-electron-mobility transistors, J. Electron. Mater., 45, 2092, 10.1007/s11664-016-4387-7

Liu, 2016, Low-leakage high-breakdown laterally integrated HEMT-LED via n-GaN electrode, IEEE Photon. Technol. Lett., 28, 1130, 10.1109/LPT.2016.2532338

Cai, 2018, Controllable uniform green light emitters enabled by circular HEMT-LED devices, IEEE Photon. J., 10, 1

Lin, 2005, High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques, IEEE Photon. Technol. Lett., 17, 1809, 10.1109/LPT.2005.852321

Kim, 2007, Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry, Appl. Phys. Lett., 91, 10.1063/1.2800290

Li, 2012, Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs, IEEE Trans. Electron. Dev., 59, 400, 10.1109/TED.2011.2176132

Lee, 2014, Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors, Optic Express, 22, A1589, 10.1364/OE.22.0A1589

Otake, 2008, Vertical GaN-based trench gate metal oxide semiconductor field-effect transistors on GaN bulk substrates, APEX, 1

Gupta, 2017, In situ oxide, GaN interlayer-based vertical trench MOSFET (OG-FET) on bulk GaN substrates, IEEE Electron. Device Lett., 38, 353, 10.1109/LED.2017.2649599

Ji, 2018, Large-area in-situ oxide, GaN interlayer-based vertical trench MOSFET (OG-FET), IEEE Electron. Device Lett., 39, 711, 10.1109/LED.2018.2813312

Lu, 2016, Monolithic integration of enhancement-mode vertical driving transistors on a standard InGaN/GaN light emitting diode structure, Appl. Phys. Lett., 109, 10.1063/1.4960105

Lu, 2017, High performance monolithically integrated GaN driving VMOSFET on LED, IEEE Electron. Device Lett., 38, 752, 10.1109/LED.2017.2691908

Tsuchiyama, 2016, Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer, APEX, 9

Cai, 2018, Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters, IEEE Electron. Device Lett., 39, 224, 10.1109/LED.2017.2781247

Chen, 1997, Schottky barrier detectors on GaN for visible-blind ultraviolet detection, Appl. Phys. Lett., 70, 2277, 10.1063/1.118837

Osinsky, 1997, Low noise p-pi-n GaN ultraviolet photodetectors, Appl. Phys. Lett., 71, 2334, 10.1063/1.120023

Parish, 1999, High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN, Appl. Phys. Lett., 75, 247, 10.1063/1.124337

Walker, 1999, High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN, Appl. Phys. Lett., 74, 762, 10.1063/1.123303

Katz, 2001, Gain mechanism in GaN Schottky ultraviolet detectors, Appl. Phys. Lett., 79, 1417, 10.1063/1.1394717

Munoz, 2001, III nitrides and UV detection, J. Phys. Condens. Matter, 13, 7115, 10.1088/0953-8984/13/32/316

Jiang, 2014, Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication, Optic Lett., 39, 5657, 10.1364/OL.39.005657

Jiang, 2015, Bias-enhanced visible-rejection of GaN Schottky barrier ultraviolet photodetectors, IEEE Photon. Technol. Lett., 27, 994, 10.1109/LPT.2015.2399302

Liu, 2018, Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy, Opt. Lett., 43, 3401, 10.1364/OL.43.003401

Lee, 2001, Investigation of quantum-confinement effect and Stokes shift in strained Ga1-xInxN/GaN double quantum wells by spectroscopic ellipsometry and photoluminescence, Appl. Phys. Lett., 78, 2366, 10.1063/1.1355987

Ochalski, 2001, Dual contribution to the Stokes shift in InGaN-GaN quantum wells, Phys. Status Solidi B Basic Solid State Phys., 228, 111, 10.1002/1521-3951(200111)228:1<111::AID-PSSB111>3.0.CO;2-M

Jhou, 2005, Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures, Solid State Electron., 49, 1347, 10.1016/j.sse.2005.06.002

Ji, 2008, Nitride-based light-emitter and photodiode dual function devices with InGaN/GaN multiple quantum dot structures, J. Cryst. Growth, 310, 2476, 10.1016/j.jcrysgro.2008.01.028

Li, 2019, Intensity-stabilized LEDs with monolithically integrated photodetectors, IEEE Trans. Ind. Electron., 66, 7426, 10.1109/TIE.2018.2873522

Jani, 2007, Design and characterization of GaN/InGaN solar cells, Appl. Phys. Lett., 91, 10.1063/1.2793180

Bhuiyan, 2012, InGaN solar cells: present state of the art and important challenges, IEEE J. Photovoltaics, 2, 276, 10.1109/JPHOTOV.2012.2193384

Dahal, 2009, InGaN/GaN multiple quantum well solar cells with long operating wavelengths, Appl. Phys. Lett., 94, 10.1063/1.3081123

Tang, 2008, Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells, Nano Lett., 8, 4191, 10.1021/nl801728d

Li, 2012, Realization of a high-performance GaN UV detector by nanoplasmonic enhancement, Adv. Mater., 24, 845, 10.1002/adma.201102585

Brubaker, 2013, On-chip optical interconnects made with gallium nitride nanowires, Nano Lett., 13, 374, 10.1021/nl303510h

Tchernycheva, 2014, Integrated photonic platform based on InGaN/GaN nanowire emitters and detectors, Nano Lett., 14, 3515, 10.1021/nl501124s

Cai, 2016, On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities, Optic Express, 24, 6004, 10.1364/OE.24.006004

Shi, 2017, Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics, Appl. Phys. Lett., 111, 10.1063/1.5010892

Yuan, 2017, GaN directional couplers for on-chip optical interconnect, Semicond. Sci. Technol., 32, 10.1088/1361-6641/aa59ef

Li, 2018, Monolithically integrated InGaN/GaN light-emitting diodes, photodetectors, and waveguides on Si substrate, Optica, 5, 564, 10.1364/OPTICA.5.000564

Li, 2018, Monolithic integration of GaN-on-Sapphire light-emitting diodes, photodetectors, and waveguides, IEEE J. Sel. Top. Quant. Electron., 24, 10.1109/JSTQE.2018.2827665

Liu, 2015, Freestanding GaN grating couplers at visible wavelengths, J. Optic., 17

Zhang, 2018, On-chip multicomponent system made with an InGaN directional coupler, Optic Lett., 43, 1874, 10.1364/OL.43.001874

Zhang, 2011, GaN directional couplers for integrated quantum photonics, Appl. Phys. Lett., 99, 10.1063/1.3656073

Higuchi, 2008, Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection, APEX, 1

Lu, 2010, Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature, Appl. Phys. Lett., 97, 10.1063/1.3483133

Feng, 2018, On-chip integration of GaN-based laser, modulator, and photodetector grown on Si, IEEE J. Sel. Top. Quant. Electron., 24, 10.1109/JSTQE.2018.2815906

Vahala, 2003, Optical microcavities, Nature, 424, 839, 10.1038/nature01939

Simeonov, 2007, Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells, Appl. Phys. Lett., 90, 10.1063/1.2460234

Tamboli, 2007, Room-temperature continuous-wave lasing in GaN/InGaN microdisks, Nat. Photon., 1, 61, 10.1038/nphoton.2006.52

Zhang, 2015, Advances in III-nitride semiconductor microdisk lasers, Phys. Status Solidi Appl. Mater. Sci., 212, 960, 10.1002/pssa.201431745

Tabataba-Vakili, 2018, Blue microlasers integrated on a photonic platform on silicon, ACS Photonics, 5, 3643, 10.1021/acsphotonics.8b00542

Tabataba-Vakili, 2019, III-nitride on silicon electrically injected microrings for nanophotonic circuits, Optic Express, 27, 11800, 10.1364/OE.27.011800

Sher, 2015, Large-area, uniform white light LED source on a flexible substrate, Optic Express, 23, A1167, 10.1364/OE.23.0A1167

Hugues, 2013, Strain evolution in GaN nanowires: from free-surface objects to coalesced templates, J. Appl. Phys., 114, 10.1063/1.4818962

Calabrese, 2016, Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil, Appl. Phys. Lett., 108, 10.1063/1.4950707

May, 2016, Nanowire LEDs grown directly on flexible metal foil, Appl. Phys. Lett., 108, 10.1063/1.4945419

Qian, 2004, Gallium nitride-based nanowire radial heterostructures for nanophotonics, Nano Lett., 4, 1975, 10.1021/nl0487774

Wang, 2006, Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal-organic chemical vapour deposition, Nanotechnology, 17, 5773, 10.1088/0957-4484/17/23/011

Dai, 2015, Flexible light-emitting diodes based on vertical nitride nanowires, Nano Lett., 15, 6958, 10.1021/acs.nanolett.5b02900

Guan, 2016, Flexible white light emitting diodes based on nitride nanowires and nanophosphors, ACS Photonics, 3, 597, 10.1021/acsphotonics.5b00696

Jain, 2000, III-nitrides: growth, characterization, and properties, J. Appl. Phys., 87, 965, 10.1063/1.371971

Neumayer, 1996, Growth of group III nitrides. A review of precursors and techniques, Chem. Mater., 8, 9, 10.1021/cm950108r

Li, 2013, Optical and thermal analyses of thin-film hexagonal micro-mesh light-emitting diodes, IEEE Photon. Technol. Lett., 25, 374, 10.1109/LPT.2013.2238621

Shchekin, 2006, High performance thin-film flip-chip InGaN-GaN light-emitting diodes, Appl. Phys. Lett., 89, 10.1063/1.2337007

Chu, 2010, High brightness GaN vertical light-emitting diodes on metal alloy for general lighting application, Proc. IEEE, 98, 1197, 10.1109/JPROC.2009.2037026

Seo, 2015, A simplified method of making flexible blue LEDs on a plastic substrate, IEEE Photon. J., 7, 10.1109/JPHOT.2015.2412459

Damilano, 2018, Optical and thermal performances of (Ga,in)N/GaN light emitting diodes transferred on a flexible tape, IEEE Photon. Technol. Lett., 30, 1567, 10.1109/LPT.2018.2858000

Choi, 2014, Fully flexible GaN light-emitting diodes through nanovoid-mediated transfer, Adv. Opt. Mater., 2, 267, 10.1002/adom.201300435

Makimoto, 2012, A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN, APEX, 5

Chun, 2012, Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing, IEEE Photon. Technol. Lett., 24, 2115, 10.1109/LPT.2012.2221694

Choi, 2014, Flexible InGaN LEDs on a polyimide substrate fabricated using a simple direct-transfer method, IEEE Photon. Technol. Lett., 26, 2115, 10.1109/LPT.2014.2348591

Chun, 2014, Laser lift-off transfer printing of patterned GaN light-emitting diodes from sapphire to flexible substrates using a Cr/Au laser blocking layer, Scripta Mater., 77, 13, 10.1016/j.scriptamat.2014.01.005

Kim, 2011, Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting, Proc. Natl. Acad. Sci. U.S.A., 108, 10072, 10.1073/pnas.1102650108

Zou, 2016, Vertical LEDs on rigid and flexible substrates using GaN-on-Si epilayers and Au-free bonding, IEEE Trans. Electron. Dev., 63, 1587, 10.1109/TED.2016.2526685

Lee, 2012, Water-resistant flexible GaN LED on a liquid crystal polymer substrate for implantable biomedical applications, Nano Energy, 1, 145, 10.1016/j.nanoen.2011.07.001

Gossler, 2014, GaN-based micro-LED arrays on flexible substrates for optical cochlear implants, J. Phys. D Appl. Phys., 47, 10.1088/0022-3727/47/20/205401

Lee, 2018, Monolithic flexible vertical GaN light-emitting diodes for a transparent wireless brain optical stimulator, Adv. Mater., 30

El-Ghoroury, 2015, 26.1: Invited Paper: Quantum Photonic Imager (QPI): A Novel Display Technology that Enables more than 3D Applications, SID Symposium Digest of Technical Papers, 46, 371, 10.1002/sdtp.10255

Li, 2020, InGaN RGB Light-Emitting Diodes With Monolithically Integrated Photodetectors for Stabilizing Color Chromaticity, IEEE Transactions on Industrial Electronics, 67, 5154, 10.1109/TIE.2019.2926038