D.K. BRICE, Inst. Phys. Conf. Ser., 28 (1976) 334
I. DÉZSI, J. Physique Colloque, 41 (1981) C1–17
I. DÉZSI, in Application of the Mössbauer Effect, Proc. Conf. Alma-Ata, Ed. by YU. M. KAGAN and L. LYUBUTIN, Goordon and Breach Science Publishers, New York, 1985, p. 193
G. LANGOUCHE and R. COUSSEMENT, p. 395
G. LANGOUCHE, Mössbauer Spectroscopy Applied to Inorganic Chemistry, Vol. 3. Ed. by G. LONG and F. GRANDJEAN, Plenum Publishing Co., 1989, p. 445
I. DÉZSI, V. KINSINGER, G. LANGOUCHE, Hyp. Int. 41 (1988) 563
J. LINDHARD, M. SCHARFF, H.E. SCHIOTT, Mat. Fys. Dan. Vld. Selsk., 33 No. 14
J.W. MAYER, L. ERIKSSON, J.A. DAVIES, Ion Implantation in Semiconductors, Academic Press, New York, 1970
G. CARTER, W. GRANT, Ion Implantation of Semiconductors, Edward Arnold, London, 1976
R. KELLY, H.M. NAGUIB, Proc. Int. Conf. on Atomic Collision Phenomenal Solids, North Holland, Amsterdam, 1970, p. 172
H.M. NAGUIB, R. KELLY, Rad. Effects, 25 (1975) 686
W. GRANT, Nucl. Instr. Meth., 182/183 (1981) 809
V.A. SINGH, A. ZUNGER, Phys. Rev. B 25 (1982) 907
G.K. WERTHEIM, Techn. Rep. Ser. IAEA 50 (1966) 237
R. IINGALLS, Solid State Commun., 14 (1974) 11
R. INGALLS, F. van der WOUDE, G. SAWATZKY, in Mössbauer Isomer Shifts Ed. by G.K. SHENOY, F.E. WAGNER, North Holland, Amsterdam, 1978, p. 361
I. DÉZSI, U. GONSER, G. LANGOUCHE, Phys. rev. Letters, 62 (1989) 1659
J.D. ESHELBY in Solid State Physics Ed. by F. SEITZ and D. TURNBULL, Academic Press, Vol. 3., New York, 1956, p. 79
J. FRIEDEL, Dislocations, Pergamon Press, New York, 1964
D. WILLIAMSON P. 337
R.E. WATSON, L.H. BENNETT, Phys. Rev. B 15 (1977) 5136; 17 (1978) 3714
B. KECK, R. SIELEMANN, Y. YOSHIDA, Phys. Rev. Letters, 71 (1993) 4178
R. ZELLER, cited in ref. 24.
R. SIELEMANN private communication