Chemical and electronic structure of the SiO2/Si interface

Materials Science Reports - Tập 1 Số 2 - Trang 65-160 - 1986
F. J. Grunthaner1, P. J. Grunthaner1
1Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 USA

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An error was made in the calculation of the oxide thickness reported in refs. [145,146]. The x-axis maximum in fig. 3 of ref. [145] should read − 30 Å instead of 20 Å. The incorrect figure is reproduced in ref. [146].

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