Characterization of proton beam-irradiated silicon using terahertz time-domain spectroscopy

Schulz-Ertner, 2007, Particle radiation therapy using proton and heavier ion beams, J. Clin. Oncol., 25, 953, 10.1200/JCO.2006.09.7816 Girdhani, 2013, Biological effects of proton radiation: what we know and don't know, Radiat. Res., 179, 257, 10.1667/RR2839.1 Lee, 2008, Low energy proton beam induces tumor cell apoptosis through reactive oxygen species and activation of caspases, Exp. Mol. Med., 40, 118, 10.3858/emm.2008.40.1.118 Sanchez-Crespo, 2004, Proton therapy beam dosimetry with silicon CMOS image sensors, Nucl. Instrum. Methods A, 525, 289, 10.1016/j.nima.2004.03.108 Sacchi, 2020, Test of innovative silicon detectors for the monitoring of a therapeutic proton beam, J. Phys.: Conf. Ser., 1662 Van Exter, 1990, Optical and electronic properties of doped silicon from 0.1 to 2 THz, Appl. Phys. Lett., 56, 1694, 10.1063/1.103120 Jiang, 2000, Dielectric constant measurement of thin films by differential time-domain spectroscopy, Appl. Phys. Lett., 76, 3221, 10.1063/1.126587 Lee, 2012, Relationship between the order of rotation symmetry in perforated apertures and terahertz transmission characteristics, Opt. Eng., 51, 10.1117/1.OE.51.11.119002 Jen, 2014 Kang, 2007, Terahertz optical and electrical properties of hydrogen-functionalized carbon nanotubes, Phys. Rev. B, 75, 10.1103/PhysRevB.75.085410 Joyce, 2016, A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy, Semicond. Sci. Technol., 31, 10.1088/0268-1242/31/10/103003 Nagai1, 2006, Characterization of electron-or proton-irradiated Si space solar cells by THz spectroscopy, Semicond. Sci. Technol., 21, 201, 10.1088/0268-1242/21/2/019 Kim, 2015, Status of and prospects for proton beam utilization at the KOMAC, J. Kor. Phys. Soc., 66, 491, 10.3938/jkps.66.491 van Exter, 1990, Carrier dynamics of electrons and holes in moderately doped silicon, Phys. Rev. B, 41, 12140, 10.1103/PhysRevB.41.12140 Srour, 2003, Review of Displacement damage effects in silicon devices, IEEE Trans. Nucl. Sci., 50, 653, 10.1109/TNS.2003.813197 Vlasenko, 1999, Detection of paramagnetic recombination centers in proton-irradiated silicon, Semiconductors, 33, 1059, 10.1134/1.1187864 Lee, 2013, Investigation of various radiation proton energy effect on n, p type silicon by positron annihilation method, J. Korean Vacuum Soc., 22, 341, 10.5757/JKVS.2013.22.6.341