Characterization and Mechanism Analysis of Growth Bands in Chemical Vapor Deposited ZnS

Materials Science Forum - Tập 944 - Trang 631-636
Peng Fei Zhang1, Hongwei Li1, Hai Yang2, Nai Guang Wei2, Jian Ming Li2, Dongxu Li2
1General Research Institute for Non-Ferrous Metals
2GRINM Guojing Advanced Materials Co., Ltd

Tóm tắt

In the chemical vapor deposited zinc sulfide, it often appears obvious light and dark growth bands along the growth direction, which will affect the homogeneity of optical properties of CVD ZnS and the efficiency of subsequent heat treatment. X-ray diffraction, Metallographic microscope and SEM were used to detect the crystal structure, grain size and microstructure, and the concentration of Zn and S in different bands was tested by EDTA titration, XRF, ICP and HF-combustion IR absorption spectrometric method. Results: Compared to the normal band, the grain size in the bright band was significantly larger, and the concentration of hexagonal phase in the bright band was lower, while the concentration ratio of Zn and S in the CVD ZnS did not have the regularity in the different bands. Combining with relevant knowledge about characteristics of the deposition process and crystal growth theory, the paper analyzes the formation mechanism of growth bands in CVD ZnS, and find that the main factor is the mutation of the concentration of the reactants in the deposition surface, affect the crystal nucleation rate and growth rate, eventually lead to the different grain morphologies, and even showing up the macroscopic growth bands. Compared with the actual process parameters, we have confirmed it and found out the main causes of mutation of the reactant concentration, this will have important guiding significance to the improvement of product quality in the future.

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Materials Science Forum

Tập 944

631-636

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