Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor

Current Applied Physics - Tập 9 - Trang 551-555 - 2009
Sa-Kyun Rha1, Tammy P. Chou2, Guozhong Cao2, Youn-Seoung Lee3, Won-Jun Lee4
1Department of Materials Science and Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea
2Department of Materials Science and Engineering, University of Washington, Seattle, Washington, WA 98195, USA
3Department of Information Communication Engineering, Hanbat National University, Daejeon 305-719, Republic of Korea
4Department of Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea

Tài liệu tham khảo

Bach, 1998, Nature, 395, 583, 10.1038/26936 Fujikake, 2002, Opt. Eng., 41, 2192, 10.1117/1.1496112 Kim, 2004, Displays, 25, 167, 10.1016/j.displa.2004.09.008 Chung, 2004, Thin Solid Films, 460, 291, 10.1016/j.tsf.2004.01.050 Kim, 2005, Appl. Phys. Lett., 87, 051917, 10.1063/1.2007856 Brotherton, 1999, Thin Solid Films, 337, 188, 10.1016/S0040-6090(98)01176-6 Quli, 1999, Mater. Sci. Eng. B, 67, 139, 10.1016/S0921-5107(99)00172-5 Yoon, 2001, Thin Solid Films, 383, 34, 10.1016/S0040-6090(00)01790-9 Zhang, 2004, J. Cryst. Growth, 260, 102, 10.1016/j.jcrysgro.2003.07.035 Shetty, 2005, Mater. Lett., 59, 872, 10.1016/j.matlet.2004.11.034 Cao, 2004, J. Phys. Chem. B, 108, 19921, 10.1021/jp040492s Takahashi, 2005, J. Phys. Chem. B, 109, 48, 10.1021/jp044772j Takahashi, 2005, Appl. Phys. Lett., 86, 1
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Current Applied Physics

Tập 9

551-555

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