Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers

10.1063/1.2963029

10.1063/1.2996566

10.1063/1.1430855

10.1063/1.120966

carlin, 2005, Crack-free fully epitaxial nitride microcavity using highly reflective AlInN/GaN Bragg mirrors, Appl Phys Lett, 86, 31107-1, 10.1063/1.1849851

10.1049/el:20001257

10.1063/1.1611643

10.1063/1.1596728

10.1049/el:20071226

10.1143/JJAP.45.2556

10.1063/1.2355476

kao, 2005, Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta<formula formulatype="inline"><tex Notation="TeX"> $_2$</tex></formula>O<formula formulatype="inline"><tex Notation="TeX">$_5$</tex></formula>/SiO<formula formulatype="inline"><tex Notation="TeX">$_2$ </tex></formula> distributed Bragg reflector, Appl Phys Lett, 87, 81105-1, 10.1063/1.2032598

kao, 2006, The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta<formula formulatype="inline"><tex Notation="TeX">$_2$</tex> </formula>O<formula formulatype="inline"><tex Notation="TeX">$_5$</tex></formula>-SiO<formula formulatype="inline"><tex Notation="TeX">$_2$</tex> </formula> distributed Bragg reflectors, IEEE Photon Technol Lett, 18, 877, 10.1109/LPT.2006.871814

10.1143/JJAP.46.5397

10.1063/1.3021148

10.1109/3.631287

10.1109/JQE.2006.881828

10.1109/2944.902168

10.1063/1.118104

10.1109/3.100877

10.1109/2944.902201

10.1063/1.124121

10.1143/JJAP.37.L1424

10.1063/1.117816

someya, 1999, Room temperature lasing at blue wavelengths in gallium nitride microcavities, Science, 285, 1905, 10.1126/science.285.5435.1905

10.1143/JJAP.34.L797

10.1063/1.2908034

10.1143/APEX.2.052101

10.1143/APEX.1.121102

10.1063/1.2202702

10.1063/1.3483133

10.1016/S0040-6090(01)01368-2

huang, 2006, Crack-free GaN/AlN distributed Bragg reflectors incorporated with GaN/AlN superlattices grown by metalorganic chemical vapor deposition, Appl Phys Lett, 88, 61904-1