Changes in the Kinetic Characteristics of Free Charge Carriers in a Narrow-Gap Pb1 – xGdxTe Semiconductor under the Effect of the EPR of Gd3+ Ions
Tóm tắt
Unusual dependences of the line shape of the electron paramagnetic resonance (EPR) spectra of paramagnetic Gd3+ centers in crystals of the narrow-gap semiconductor Pb1 – xGdxTe (x = 1.5 × 10–4) on the temperature and microwave power level in the spectrometer cavity are revealed at temperatures of T = 5–100 K. Based on an analysis of the shape parameters of resonance lines recorded in the X-band, it is concluded that the most probable cause of changes in the observed EPR spectra is the effect of resonance transitions between the spin levels of Gd3+ centers on the kinetic characteristics of free charge carriers bound by exchange interactions with Gd3+ ions.
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