Changes in the Kinetic Characteristics of Free Charge Carriers in a Narrow-Gap Pb1 – xGdxTe Semiconductor under the Effect of the EPR of Gd3+ Ions

Allerton Press - Tập 87 - Trang 1856-1861 - 2023
V. A. Ulanov1,2, R. R. Zainullin1, I. V. Yatsyk3, I. I. Fazlizhanov2
1Kazan State Power Engineering University, Kazan, Russia
2Zavoisky Physical-Technical Institute, Federal Research Center Kazan Scientific Center, Russian Academy of Sciences, Kazan, Russia
3Zavoisky Physical Technical Institute, Federal Research Center, Kazan Scientific Center, Russian Academy of Sciences, Kazan, Russia

Tóm tắt

Unusual dependences of the line shape of the electron paramagnetic resonance (EPR) spectra of paramagnetic Gd3+ centers in crystals of the narrow-gap semiconductor Pb1 – xGdxTe (x = 1.5 × 10–4) on the temperature and microwave power level in the spectrometer cavity are revealed at temperatures of T = 5–100 K. Based on an analysis of the shape parameters of resonance lines recorded in the X-band, it is concluded that the most probable cause of changes in the observed EPR spectra is the effect of resonance transitions between the spin levels of Gd3+ centers on the kinetic characteristics of free charge carriers bound by exchange interactions with Gd3+ ions.

Tài liệu tham khảo

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