Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET

International Technology Roadmap for Semiconductors (ITRS, 2012); http://www.itrs.net/

10.1002/adma.201506173

10.1007/s11664-014-3211-5

10.1109/LED.2008.2005650

10.1109/RSM.2015.7355030

10.1016/j.spmi.2013.04.013

10.1109/TED.2016.2586459

Sahoo, 2009, International Journal of Electronic Engineering Research, 1, 117

10.1063/1.4811295

Yaghuti M. Saghafi K. , Nanoelectronics Conference 2nd IEEE International, 686 (2008), Available: http://dx.doi.org/10.1109/INEC.2008.4585578

10.1038/nature01797

10.1007/s10825-016-0797-2

10.1016/j.spmi.2016.09.021

10.1088/0268-1242/31/4/045009

10.1109/TED.2011.2175485

10.1016/j.spmi.2016.11.022

10.1109/TED.2015.2475176

10.1109/TED.2008.2005166

10.1021/nl025875l

10.1038/nature04796

10.1002/adma.200502752

10.1016/S1468-6996(03)00064-0

10.1063/1.126673

10.1209/0295-5075/98/67001

10.1002/anie.201103062

Cuniberti G. Richter K. Fagas G. . Springer: New York, NY, USA, pp. 153 (2005).

10.1088/0953-8984/21/39/395502

10.1103/RevModPhys.84.1419

10.1109/TED.2013.2291909

10.1103/PhysRevA.38.3098

10.1103/PhysRevB.37.785

10.1103/PhysRevB.13.5188

10.1039/C5NR01052G

10.1038/srep09075

10.1109/TED.2006.878018

Ahmadi M. T. Johari Z. Amin N. A. Mousavi S. M. Ismail R. , Semiconductor Electronics (ICSE) IEEE International Conference on, pp. 256 (2010).