Basic research on chemical mechanical polishing of single-crystal SiC—Electro–Fenton: Reaction mechanism and modelling of hydroxyl radical generation using condition response modelling

Journal of Environmental Chemical Engineering - Tập 9 - Trang 104954 - 2021
Jiayun Deng1, Jiabin Lu1, Qiusheng Yan1, Jisheng Pan1
1School of Electromechanical Engineering, Guangdong University of Technology, No.100 Waihuan Xi Road, Guangzhou Higher Education Mega Center, Panyu District, Guangzhou 510006, China

Tài liệu tham khảo

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