Band-gap transition induced by interlayer van der Waals interaction in MoS2

American Physical Society (APS) - Tập 84 Số 4
Sang Wook Han1, HyukSang Kwon2, Seong Keun Kim2, Sunmin Ryu3, Won Seok Yun1, D. H. Kim4, Jihyun Hwang4, Jae-Yong Kang4, Jaeyoon Baik5, Hyun Joon Shin5, Soon Cheol Hong1
1Department of Physics and Energy Harvest–Storage Research Center, University of Ulsan, Ulsan 680-749, Korea
2Deparment of Chemistry and Department of Biophysics and Chemical Biology, Seoul National University, Seoul 151-747, Korea
3Department of Applied Chemistry, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea
4Department of Physics, The Catholic University of Korea, Bucheon 420-743,#N#Korea
5Pohang Accelerator Laboratory (PAL), POSTECH, Pohang 790-784, Korea

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Tài liệu tham khảo

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American Physical Society (APS)

Tập 84 Số 4

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