Ballistic transport in semiconductor at low temperatures for low-power high-speed logic

IEEE Transactions on Electron Devices - Tập 26 Số 11 - Trang 1677-1683 - 1979
M. S. Shur1, L.F. Eastman2
1University of Minnesota, Minneapolis, MN
2School of Electrical Engineering, Cornell University, Ithaca, NY, USA

Tóm tắt

Từ khóa


Tài liệu tham khảo

10.1049/el:19760470

10.1049/el:19740386

10.1109/JSSC.1974.1050512

10.1109/JSSC.1974.1050513

welch, 1977, planar gaas integrated circuits fabricated by ion implantation, 1977 International Electron Devices Meeting, 205, 10.1109/IEDM.1977.189206

10.1049/el:19770111

ballantyne, 1978, The electronic revolution and the potential of the new submicron facility at Cornell, Engineering, Cornell Quart, 12, 2