Ba termination of Ge(001) studied with STM

Nanotechnology - Tập 26 Số 15 - Trang 155701 - 2015
W. Koczorowski1,2, T. Grzela3, M. W. Radny1,4, Steven R. Schofield5,2, Giovanni Capellini6,3, R. Czajka1, Thomas Schroeder7,3, Neil J. Curson8
1Institute of Physics, Poznan University of Technology, ul. Piotrowo 3, 60-965 Poznan, Poland
2London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, UK
3IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
4School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan 2308, Australia
5Department of Physics and Astronomy, UCL, London, WC1E 6BT, UK
6Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma, Italy
7BTU Cottbus, Konrad-Zuse Str. 1, D-03046 Cottbus, Germany
8Department of Electronic and Electrical Engineering, UCL, London, WC1E 7JE, UK

Tóm tắt

Từ khóa


Tài liệu tham khảo

Claeys C, 2007, Germanium-Based Technologies: From Materials to Devices

10.1109/LED.2007.899329

10.1063/1.3279129

10.3390/s110100696

10.1063/1.4730404

10.1364/OE.20.011316

10.1155/2008/196572

10.1063/1.3028025

Scappucci G, 2009, Nanotechnology, 20, 10.1088/0957-4484/20/49/495302

10.1109/TED.2010.2046992

10.1002/adma.200904306

10.1016/j.physb.2009.09.043

10.1002/pssc.200982404

10.1063/1.4865955

10.1149/1.3545703

Abel S, 2013, Nanotechnology, 24, 10.1088/0957-4484/24/28/285701

10.1103/PhysRevLett.81.3014

10.1126/science.293.5529.468

10.1063/1.4772939

10.1103/PhysRevB.84.075330

10.1063/1.3558997

10.1103/PhysRevLett.100.246807

10.1016/j.mssp.2006.08.075

10.1103/PhysRevB.85.195316

10.1103/PhysRevB.89.155319

10.1016/S0039-6028(99)01079-1

10.1016/j.physrep.2003.09.001

10.1063/1.2432410

10.1016/S0039-6028(00)00406-4

10.1103/PhysRevB.41.9688

10.1002/chem.200901472

10.1103/PhysRevLett.101.105503

Thông tin
Thông tin xuất bản

Nanotechnology

Tập 26 Số 15

155701

Thông tin tác giả