B doping effect on gas source Si-MBE growth: a comparison of B2H6 gas doping and HBO2 Knudsen cell doping

Journal of Crystal Growth - Tập 111 - Trang 856-859 - 1991
Hiroyuki Hirayama1, Masayuki Hiroi1, Kazuhisa Koyama1, Toru Tatsumi1
1Microelectronics Research Laboratories, NEC Corporation, Miyazaki 4-1-1, Miyamae-ku, Kawasaki 213, Japan

Tài liệu tham khảo

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