Assessment of surface potential models by molecular dynamics simulations of atom ejection from (100)-Si surfaces
Tài liệu tham khảo
2007
Ziegler, 2010, SRIM – the stopping and range of ions in matter (2010), Nucl. Instrum. Methods Phys. Res. B, 268, 1818, 10.1016/j.nimb.2010.02.091
Burenkov, 2012, Angular distributions of sputtered silicon at grazing gallium ion beam incidence, Nucl. Instrum. Methods Phys. Res. B, 272, 23, 10.1016/j.nimb.2011.01.025
Hobler, 2011, Dynamic binary collision simulation of focused ion beam milling of deep trenches, Nucl. Instrum. Methods Phys. Res. B, 269, 1609, 10.1016/j.nimb.2010.12.076
S.J. Lindsey, G. Hobler, Sputtering of silicon at glancing incidence, these proceedings.
Wittmaack, 2012, Depth of origin of sputtered atoms: exploring the dependence on relevant target properties to identify the correlation with low-energy ranges, Nucl. Instrum. Methods Phys. Res. B, 281, 37, 10.1016/j.nimb.2012.03.028
Sigmund, 1989, Round robin computer simulation of ejection probability in sputtering, Nucl. Instrum. Methods Phys. Res. B, 36, 110, 10.1016/0168-583X(89)90573-9
Smith, 1992, Computational models in atomic collision studies, Nucl. Instrum. Methods Phys. Res. B, 67, 373, 10.1016/0168-583X(92)95836-G
Robinson, 1993, Computer simulation of sputtering, Mat. Fys. Medd. Dan. Vid. Selsk., 43, 27
Thompson, 1968, The energy spectrum of ejected atoms during the high energy sputtering of gold, Philos. Mag., 18, 377, 10.1080/14786436808227358
Hofer, 1991, Angular, energy, and mass distribution of sputtered particles, 15
Biersack, 1984, Sputtering studies with the Monte Carlo program TRIM.SP, Appl. Phys. A, 34, 73, 10.1007/BF00614759
Möller, 1988, TRIDYN binary collision simulation of atomic collisions and dynamic composition changes in solids, Comp. Phys. Commun., 51, 355, 10.1016/0010-4655(88)90148-8
Ebm, 2009, Assessment of approximations for efficient topography simulation of ion beam processes: 10keV Ar on Si, Nucl. Instrum. Methods Phys. Res. B, 267, 2987, 10.1016/j.nimb.2009.06.014
Sigmund, 1969, Theory of sputtering I. Sputtering yield of amorphous and polycrystalline targets, Phys. Rev., 184, 383, 10.1103/PhysRev.184.383
Gades, 1992, Pair versus many-body potentials in atomic emission processes from a Cu surface, Nucl. Instrum. Methods Phys. Res. B, 69, 232, 10.1016/0168-583X(92)96012-N
Egerton, 2010, Basic questions related to electron-induced sputtering in the TEM, Ultramicroscopy, 110, 991, 10.1016/j.ultramic.2009.11.003
Smith, 1989, keV particle bombardment of semiconductors: a molecular-dynamics simulation, Phys. Rev. B, 40, 93, 10.1103/PhysRevB.40.93
Plimpton, 1995, Fast parallel algorithms for short-range molecular dynamics, J. Comp. Phys., 117, 1, 10.1006/jcph.1995.1039
Tersoff, 1988, Empirical interatomic potential for silicon with improved elastic properties, Phys. Rev. B, 38, 9902, 10.1103/PhysRevB.38.9902
Hobler, 1995, Monte Carlo simulation of two-dimensional implanted dopant distributions at mask edges, Nucl. Instrum. Methods Phys. Res. B, 96, 155, 10.1016/0168-583X(94)00476-5
Eckstein, 1991
Andersen, 1966, A simple nonbinary scattering model applicable to atomic collisions in crystals at low energies, Mat. Fys. Medd. Dan. Vid. Selsk., 34, 15
Robinson, 1997, Attractive interaction potentials and the binary collision approximation, Radiat. Eff. Defects Solids, 141, 1, 10.1080/10420159708211552
Robinson, 1996, Binding energy effects in cascade evolution and sputtering, Nucl. Instrum. Methods Phys. Res. B, 115, 549, 10.1016/0168-583X(95)01567-1
