Application of artificial synapse based on all-inorganic perovskite memristor in neuromorphic computing

Wang, 2018, Photonic synapses based on inorganic perovskite quantum dots for neuromorphic computing, Adv. Mater., 30 Sun, 2021, Synaptic devices based neuromorphic computing applications in artificial intelligence, Mater. Today Phys., 18 Li, 2019, Synaptic transistor capable of accelerated learning induced by temperature-facilitated modulation of synaptic plasticity, ACS Appl. Mater. Interfaces, 11, 46008, 10.1021/acsami.9b17227 Nayak, 2012, Controlling the synaptic plasticity of a Cu2S gap-type atomic switch, Adv. Funct. Mater., 22, 3606, 10.1002/adfm.201200640 Feng, 2017, Printed neuromorphic devices based on printed carbon nanotube thin-film transistors, Adv. Funct. Mater., 27, 10.1002/adfm.201604447 Yan, 2018, Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning, Adv. Funct. Mater., 28, 10.1002/adfm.201803728 Park, 2018, Reduced graphene oxide-based artificial synapse yarns for wearable textile device applications, Adv. Funct. Mater., 28, 10.1002/adfm.201804123 Chen, 2020, Recent advances in synaptic devices based on halide perovskite, ACS Appl. Electron. Mater., 2, 1815, 10.1021/acsaelm.0c00180 Han, 2019, Recent progress in three-terminal artificial synapses: from device to system, Small, 15 Park, 2017, Artificial synapses with short- and long-term memory for spiking neural networks based on renewable materials, ACS Nano, 11, 8962, 10.1021/acsnano.7b03347 Wang, 2022, Optically modulated dual-mode memristor arrays based on core-shell CsPbBr3@graphdiyne nanocrystals for fully memristive neuromorphic computing hardware, SmartMat, 1 Choi, 2020, Emerging memristive artificial synapses and neurons for energy-efficient neuromorphic computing, Adv. Mater., 32, 10.1002/adma.202004659 Zhang, 2022, Synaptic behaviors in flexible Au/WOx/Pt/mica memristor for a neuromorphic computing system, Mater. Today Phys., 23 Zhou, 2018, Biological spiking synapse constructed from solution processed bimetal core-shell nanoparticle based composites, Small, 14 Zhang, 2019, Artificial synapse emulated by charge trapping-based resistive switching device, Adv. Mater. Technol., 4, 10.1002/admt.201800342 Lee, 2020, Realization of biomimetic synaptic functions in a one-cell organic resistive switching device using the diffusive parameter of conductive filaments, ACS Appl. Mater. Interfaces, 12, 51719, 10.1021/acsami.0c15519 Zhong, 2022, Ultra-high dielectric tuning performance and double-set resistive switching effect achieved on the Bi2NiMnO6 thin film prepared by sol-gel method, J. Colloid Interface Sci., 606, 913, 10.1016/j.jcis.2021.08.109 Wang, 2021, Phase change random access memory for neuro-inspired computing, Adv. Electron. Mater., 7, 10.1002/aelm.202001241 Han, 2022, Light-stimulated synaptic transistor with high PPF feature for artificial visual perception system application, Adv. Funct. Mater., 32, 10.1002/adfm.202270129 Li, 2021, Inorganic perovskite quantum dot-based strain sensors for data storage and in-sensor computing, ACS Appl. Mater. Interfaces, 13, 30861, 10.1021/acsami.1c07928 Liu, 2021, Weak light-stimulated synaptic hybrid phototransistors based on Island-like perovskite films prepared by spin coating, ACS Appl. Mater. Interfaces, 13, 13362, 10.1021/acsami.0c22604 Chen, 2021, Ultrafast responsive and low-energy-consumption poly(3-hexylthiophene)/perovskite quantum dots composite film-based photonic synapse, Adv. Funct. Mater., 31, 10.1002/adfm.202105911 Max, 2020, Hafnia-based double-layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing, ACS Appl. Electron. Mater., 2, 4023─4033, 10.1021/acsaelm.0c00832 Cai, 2022, Molecular ferroelectric/semiconductor interfacial memristors for artificial synapses, Npj. Flex. Electron., 6, 16, 10.1038/s41528-022-00152-0 Zhou, 2019, Tunable synaptic behavior realized in C3N composite based memristor, Nano Energy, 58, 293, 10.1016/j.nanoen.2019.01.045 Lee, 2018, Synaptic plasticity and metaplasticity of biological synapse realized in a KNbO3 memristor for application to artificial synapse, ACS Appl. Mater. Interfaces, 10, 25673, 10.1021/acsami.8b04550 Kim, 2018, Recent advances in memristive materials for artificial synapses, Adv. Mater. Technol., 3, 10.1002/admt.201800457 Wang, 2019, Memristive synapses for brain-inspired computing, Adv. Mater. Technol., 4, 10.1002/admt.201800544 Yan, 2018, Memristor with Ag-Cluster-Doped TiO2 films as artificial synapse for neuroinspired computing, Adv. Funct. Mater., 28 Sun, 2018, All-inorganic perovskite nanowires-InGaZnO heterojunction for high-performance ultraviolet-visible photodetectors, ACS Appl. Mater. Interfaces, 10, 7231, 10.1021/acsami.7b17935 Saleem, 2021, CsPbI3 nanorods as the interfacial layer for high-performance, all-solution-processed self-powered photodetectors, J. Mater. Sci. Technol., 75, 196, 10.1016/j.jmst.2020.07.049 Song, 2015, Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides (CsPbX3), Adv. Mater., 27, 7162, 10.1002/adma.201502567 Yantara, 2015, Inorganic halide perovskites for efficient light-emitting diodes, J. Phys. Chem. Lett., 6, 4360, 10.1021/acs.jpclett.5b02011 Beal, 2016, Cesium lead halide perovskites with improved stability for tandem solar cells, J. Phys. Chem. Lett., 7, 746, 10.1021/acs.jpclett.6b00002 Sutton, 2016, Bandgap-tunable cesium lead halide perovskites with high thermal stability for efficient solar cells, Adv. Energy Mater., 6, 10.1002/aenm.201502458 Kim, 2019, Dimensionality dependent plasticity in halide perovskite artificial synapses for neuromorphic computing, Adv. Electron. Mater., 5 Jeong, 2021, Solution-Processed perovskite field-effect transistor artificial synapses, Adv. Mater., 33, 10.1002/adma.202104034 Xu, 2016, Organometal halide perovskite artificial synapses, Adv. Mater., 28, 5916, 10.1002/adma.201506363 Wen, 2021, Thin film transistors integrating CsPbBr3 quantum dots for optoelectronic memory application, J. Phys. D Appl. Phys., 54, 10.1088/1361-6463/abcbc0 Lin, 2018, Transient resistive switching memory of CsPbBr3Thin films, Adv. Electron. Mater., 4, 10.1002/aelm.201700596 Liu, 2020, Extremely low program current memory based on self-assembled all-inorganic perovskite single crystals, ACS Appl. Mater. Interfaces, 12, 31776, 10.1021/acsami.0c07186 Liao, 2017, Inorganic cesium lead halide CsPbX3 nanowires for long-term stable solar cells, Sci. China Mater., 60, 285, 10.1007/s40843-017-9014-9 Zhong, 2022, Artificial optoelectronic synaptic characteristics of Bi2FeMnO6 ferroelectric memristor for neuromorphic computing, Mater. Des., 222, 10.1016/j.matdes.2022.111046 Huang, 2022, Self-rectifying-based memristors for neuromorphic computing, Sci. Bull., 67, 1213, 10.1016/j.scib.2022.05.008 Yin, 2022, A method to improve the performance of all-inorganic halide perovskite CsPbBr3 memory, Mater. Res. Express, 9, 10.1088/2053-1591/ac76a1 Ham, 2019, Photonic organolead halide perovskite artificial synapse capable of accelerated learning at low power inspired by dopamine-facilitated synaptic activity, Adv. Funct. Mater., 29 Seo, 2021, Organic synaptic transistors for flexible and stretchable artificial sensory nerves, MRS Bull., 46, 321, 10.1557/s43577-021-00093-5 Chen, 2019, Artificial synapses based on nanomaterials, Nanotechnology, 30, 10.1088/1361-6528/aae470 Han, 2020, Tunable synaptic plasticity in crystallized conjugated polymer nanowire artificial synapses, Adv. Intell. Systems., 2, 10.1002/aisy.201900176 Lisman, 2005, Postsynaptic depolarization requirements for LTP and LTD: a critique of spike-timing-dependent plasticity, Nat. Neurosci., 8, 839, 10.1038/nn0705-839 Zhang, 2017, Emulating short-term and long-term plasticity of bio-synapse based on Cu/a-Si/Pt memristor, IEEE Electron. Device Lett., 38, 1208, 10.1109/LED.2017.2722463 Wang, 2019, Manipulation of the electrical behaviors of Cu/MXene/SiO2/W memristor, APEX, 12 Sun, 2019, Physically transient memristive synapse with short-term plasticity based on magnesium oxide, IEEE Electron. Device Lett., 40, 706, 10.1109/LED.2019.2904752 Ryu, 2020, Self-Rectifying resistive switching and short-term memory characteristics in Pt/HfO2/TaOx/TiN artificial synaptic device, Nanomaterials, 10, 2159, 10.3390/nano10112159