Angle-resolved photoemission study of Si electronic structure: Boron concentration dependence

Physica C: Superconductivity - Tập 470 - Trang S641-S643 - 2010
Takanori Wakita1,2, Hiroyuki Okazaki2,3, Yoshihiko Takano4, Masaaki Hirai1,3, Yuji Muraoka1,2,3, Takayoshi Yokoya1,2,3
1Research Laboratory for Surface Science (RLSS), Okayama University, Okayama 700-8530, Japan
2JST-CREST, Okayama 700-8530, Japan
3The Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
4National Institute for Material Science (NIMS), Tsukuba 305-0047, Japan

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Thông tin xuất bản

Physica C: Superconductivity

Tập 470

S641-S643

Thông tin tác giả