Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance

Engineering Science and Technology, an International Journal - Tập 19 - Trang 1857-1863 - 2016
Subha Subramaniam1,2, Sangeeta M. Joshi3, R.N. Awale1
1Department of Electronics, Veeramata Jijabai Technological Institute, University of Mumbai, India
2Department of Electronics, Shah and Anchor Kutchhi Engineering College, University of Mumbai, India
3Department of Electronics, Vidyalankar Institute of Technology, University of Mumbai, India

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Engineering Science and Technology, an International Journal

Tập 19

1857-1863

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