Analytical model of LDMOS with a single step buried oxide layer

Superlattices and Microstructures - Tập 97 - Trang 358-370 - 2016
Song Yuan1, Baoxing Duan1, Zhen Cao1, Haijun Guo1, Yintang Yang1
1Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China

Tài liệu tham khảo

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