Analysis on Trapping Kinetics of Stress-Induced Trapped Holes in Gate Dielectric of Amorphous HfInZnO TFT

IEEE Transactions on Electron Devices - Tập 63 Số 6 - Trang 2398-2404 - 2016
Dae Woong Kwon1, Jang Hyun Kim1, Wandong Kim1, Sang Wan Kim2,3,1, Jong‐Ho Lee1, Byung‐Gook Park1
1Inter-University Semiconductor Research Center, Seoul National University, Seoul, South Korea
2Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
3Department of Electronic Engineering, Sogang University, Seoul, South Korea

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IEEE Transactions on Electron Devices

Tập 63 Số 6

2398-2404

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