Analysis of silicon wafer surface preparation for heterojunction solar cells using X-ray photoelectron spectroscopy and effective minority carrier lifetime

NEDO: World highest conversion efficiency of 26.33% achieved in a crystalline silicon solar cell, Available online: 〈http://www.nedo.go.jp/english/news/AA5en_100109.html〉 (accessed 23 January 2018). Yoshikawa, 2017, Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%, Nat. Energy, 2, 17032, 10.1038/nenergy.2017.32 Chong, 2014, Characterization of MAE-textured nanoporous silicon for solar cells application: optics and surface passivation, IEEE J. Photovolt., 4, 1235, 10.1109/JPHOTOV.2014.2333871 Liu, 2018, Controllable a-Si:H/c-Si interface passivation by residual SiH4 molecules in H2 plasma, Sol. Energy Mater. Sol. Cells, 174, 233, 10.1016/j.solmat.2017.09.009 L. Zhang, U.K. Das, Z. Shu, H. Liu, R.W. Birkmire, S.S. Hegedus, Experimental and simulated analysis of p a-Si:H defects on silicon heterojunction solar cells: trade-offs between Voc and FF, in: Proceeding of the 42nd IEEE Photovoltaic Specialist Conference, New Orleans LA, USA, 2015, pp. 1–5. Salman, 2017, Effect of surface texturing processes on the performance of crystalline silicon solar cell, Sol. Energy, 147, 228, 10.1016/j.solener.2016.12.010 Dasgupta, 2017, Review on different front surface modification of both n+-p-p+ and p+-n-n+ c-Si solar cell, Mater. Today.: Proc., 4, 12698, 10.1016/j.matpr.2017.10.086 He, 2015, Laser fired contact for n-type crystalline Si solar cells, Prog. Photovolt.: Res. Appl., 23, 1091, 10.1002/pip.2520 Lu, 2007, Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation, Appl. Phys. Lett., 91, 063507, 10.1063/1.2768635 R.A. Sinton, A. Cuevas, M. Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, in: Proceeding of the 25th IEEE Photovoltaic Specialist Conference, Washington DC, USA, 1996, pp. 457–460. Chhabra, 2010, High effective minority carrier lifetime on silicon substrates using quinhydrone-methanol passivation, Appl. Phys. Lett., 98, 063502, 10.1063/1.3309595 Kendall, 1990, A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts, J. Vac. Sci. Technol. A, 8, 3598, 10.1116/1.576513 Seidel, 1990, Anisotropic etching of crystalline silicon in alkaline solutions, I. Orientation dependence and behavior of passivation layers, J. Electrochem. Soc., 137, 3612, 10.1149/1.2086277 Kern, 1990, The evolution of silicon wafer cleaning technology, J. Electrochem. Soc., 137, 1887, 10.1149/1.2086825 Turner, 1960, On the mechanism of chemically etching germanium and silicon, J. Electrochem. Soc., 107, 810, 10.1149/1.2427519 Casa Software Ltd. UK, CasaXPS User’s Manual, Version 2. 0, Oct 2001 〈http://www.casaxps.com〉 (accessed 24 January 2018). Scofield, 1976, Hartree-Slater subshell photoionization cross-sections at 1254 and 1487 eV, J. Electron Spectrosc. Relat. Phenom., 8, 129, 10.1016/0368-2048(76)80015-1 Shard, 2014, Detection limits in XPS for more than 6000 binary systems using Al and Mg Ka X-rays, J. Surf. Interface Anal., 46, 175, 10.1002/sia.5406 Shu, 2015, Experimental and simulated analysis of front vs all-back-contact silicon heterojunction solar cells: effect of interface and doped layer defects, Prog. Photovolt., 23, 78, 10.1002/pip.2400 J.F. Moulder, W. Stickle, P. Sobol, K. Bomben, Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data, Perkin-Elmer Corporation, Physical Electronics Division, Minnesota, USA. J. Goodman, S. Andrews, Fluoride contamination from fluoropolymers in semiconductor manufacture, Solid State Technol., July 1990, p. 65+, Academic OneFile (Accessed 7 October 2017). Williams, 1996, Etch rates for micromachining processing, J. Microelectromech. Syst., 5, 256, 10.1109/84.546406 Barrio, 2006, Surface characterization of wafers for silicon-heterojunction solar cell, J. Non-Cryst. Solids, 352, 945, 10.1016/j.jnoncrysol.2005.09.035