Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

Ajayan, 2015, A review of InP/InAlAs⧹ InGaAs based transistors for high frequency applications, Superlattices Microstruct, 86, 1, 10.1016/j.spmi.2015.06.048

Moore, 1965, Cramming more components onto integrated circuits, Electronics, 38, 114

Del Alamo, 2011, Nanometre scale electronics with III-V compound semiconductors, Nature, 479, 317, 10.1038/nature10677

Wilk, 2001, High-k gate dielectrics: current status and material properties considerations, J Appl Phys, 89, 5243, 10.1063/1.1361065

Kaoa, 2011, A wide tuning range and low phase noise 20GHz 0.18µm CMOS voltage controlled oscillator, Int J Electron Commun, 65, 763, 10.1016/j.aeue.2010.12.003

Chau, 2007, Integrated nano electronics for the future, Nat Mater, 6, 810, 10.1038/nmat2014

Nirmal, 2013, Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics, Microelectron Reliab, 53, 499, 10.1016/j.microrel.2012.09.008

Vogel, 2007, Technology and metrology of new electronic materials and devices, Nat Nanotechnol, 2, 25, 10.1038/nnano.2006.142

Nirmal, 2013, Subthreshold analysis of nanoscale FinFETs for ultra low power applications using high-k materials, Int J Electron, 100, 803, 10.1080/00207217.2012.720955

Bansal, 2015, Advances in logic device scaling, IETE Tech Rev, 32, 311, 10.1080/02564602.2015.1023372

Zhao, 2009, High performance In0.7Ga0.3As metal oxide semiconductor transistors with mobility 4500cm2/Vs using InP barrier layer, Appl Phys Lett, 94, 10.1063/1.3133360

Zhao, 2010, Effects of barrier layers on device performance of high mobility In0.7Ga0.3As MOSFET, Appl Phys Lett, 96, 10.1063/1.3350893

Hyeon, 2011, Self aligned metal source/drain InxGa1-xAs n-metal-oxide-semiconductor field effect transistors using Ni InGaAs alloy, Appl Phys Express, 4

Yang, 2012, High mobility In0.53Ga0.47As quantum well MOSFET structures, J Appl Phys, 111, 10.1063/1.4721328

Lee, 2013, High performance raised source/drain InAs/In0.53Ga0.47As channel MOSFETs with reduced leakage using a vertical spacer, Appl Phys Lett, 103, 10.1063/1.4838660

Mo, 2014, Asymmetric InGaAs/InP MOSFETs with source/drain engineering, IEEE Electron Device Lett, 35, 515, 10.1109/LED.2014.2308925

Singisetti, 2009, In0.53Ga0.47As channel MOSFETs with self aligned InAs source/drain formed by MEE regrowth, IEEE Electron Device Lett, 30, 1128, 10.1109/LED.2009.2031304

Lin, 2012, A self aligned InGaAs quantum well MOSFET fabricated through a lift off free front end process, Appl Phys Express, 5, 10.1143/APEX.5.064002

Lahiri, 2012, CMOS-based active RC sinusoidal oscillator with four-phase quadrature outputs and single-resistance-controlled (SRC) tuning laws, Int J Electron Commun, 66, 1032, 10.1016/j.aeue.2012.05.008

Sun Y, Majumdar A, Cheng CW. High performance CMOS compatible self aligned In0.53Ga0.47As MOSFETs with Gmsat over 2200µS/µm at VDD=0.5V. In: Proc. IEDM Tech. Dig. San Francisco, December; 2014. p. 25. 3. 1–25. 3. 4.

Huang, 2013, Reduction of leakage current in In0.53Ga0.47As channel metal oxide semiconductor fieldeffect transistors using AlAs0.56Sb0.44 confinement layers, Appl Phys Lett, 103, 10, 10.1063/1.4831683

Xuan, 2008, High performance inversion type enhancement mode InGaAs MOSFET with maximum drain current exceeding 1A/mm, IEEE Electron Device Lett, 29, 294, 10.1109/LED.2008.917817

Sun Y, Kiewra E, Souza J. Enhancement mode In0.7Ga0.3As channel MOSFET with ALD Al2O3. In: Proc. Device Research Conference (DRC), June; 2007, p. 209–10.

Koh, 2014, Lg=100nm In0.7Ga0.3As quantum well MOSFETs with atomic layer deposited beryllium oxide as interfacial layer, Appl Phys Lett, 104, 10.1063/1.4871504

Abdipour, 2004, A CAD-Oriented Simultaneous signal and noise modeling and analysis of mm-wave FET structures, Int J Electron Commun, 58, 65, 10.1078/1434-8411-54100208

Leskela, 2003, Atomic layer deposition chemistry: recent developments and future challenges, Angew Chem Int Ed, 42, 5548, 10.1002/anie.200301652

Miikkulainen, 2013, Crystallinity of inorganic films grown by atomic layer deposition: overview and general trends, J Appl Phys, 113, 10.1063/1.4757907

Leskela, 2002, Atomic layer deposition (ALD): from precursors to thin film structures, Thin Solid Films, 409, 138, 10.1016/S0040-6090(02)00117-7

Zhao, 2009, In0.53Ga0.47As n-metal oxide semiconductor FETs with atomic layer deposited Al2O3, HfO2, and LaAlO3 gate dielectrics, J Vac Sci Technol B, 27, 2024, 10.1116/1.3125284

Xuan Y, Wu YQ, Shen T. High performance sub micron inversion type enhancement mode InGaAs MOSFETs with ALD Al2O3, HfO2, HfAlO as gate dielectrics. In: Proc. IEDM Tech. Dig., Washington, December; 2007, p. 637–40.

Shahrjerdi, 2008, Fabrication of self aligned enhancement mode In0.53Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack, IEEE Electron Device Lett, 29, 557, 10.1109/LED.2008.922031

Lin, 2008, Inversion mode self aligned In0.53Ga0.47As n-channel MOSFETs with HfAlO gate dielectric and TaN metal gate, IEEE Electron Device Lett, 29, 977, 10.1109/LED.2008.2001766

Koveshnikov, 2008, In0.53Ga0.47As based MOS capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm, Appl Phys Lett, 92, 10.1063/1.2931031

Lin, 2008, High performance self aligned inversion channel In0.53Ga0.47As MOSFET with Al2O3/Ga2O3(Gd2O3) as gate dielectrics, Appl Phys Lett, 93, 10.1063/1.2956393

Ren, 1998, Ga2O3(Gd2O3)/InGaAs enhancement mode n-channel MOSFETs, IEEE Electron Device Lett, 19, 309, 10.1109/55.704409

Chen, 2010, Effects of fluorine incorporated into HfO2 gate dielectrics on InP and In0.53Ga0.47As MOSFETs, Appl Phys Lett, 96, 10.1063/1.3457388

Chenl, 2010, Flourinated HfO2 gate dielectric engineering on and In0.53Ga0.47As MOSFETs, Appl Phys Lett, 96

Sun, 2007, Enhancement mode buried channel In0.7Ga0.3As/In0.52Al0.48As MOSFETs with high-k gate dielectrics, IEEE Electron Device Lett, 28, 473, 10.1109/LED.2007.896813

Lin TD, Chen CP, Chiu HC. Self aligned inversion channel D-mode InGaAs MOSFET using Al2O3/Ga2O3(Gd2O3) as gate dielectrics. In: Proc. Device Research Conference (DRC), Santa Barbara, June; 2008, p. 39–40.

Kim DH, Hundal P, Papavasiliou A. E-mode planar Lg=35nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT=0.8nm) composite insulator. In: Proc. IEDM Tech. Dig., 2012, p. 32.2.1–32.2.4.

Terao, 2011, InP/InGaAs composite MOSFETs with regrown source and Al2O3 gate dielectric exhibiting maximum drain current exceeding 1.3Ma/µm, Appl Phys Express, 4, 10.1143/APEX.4.054201

Nagaiah, 2010, Mobility and remote scattering in buried InGaAs quantum well channel with high-k gate oxide, J Vac Sci Technol B, 28, 10.1116/1.3360903

Oktyabrsky, 2011, Electron scattering in buried InGaAs/high-k metal oxide semiconductor channels, ECS Trans, 35, 385, 10.1149/1.3569931

Wang, 2010, Charge pumping characterization of interface traps in Al2O3 In0.75Ga0.25As MOSFETs, Appl Phys Lett, 96, 10.1063/1.3315870

Egard, 2012, High frequency performance of self aligned gate last surface channel In0.53Ga0.47As MOSFET, IEEE Electron Device Lett, 33, 369, 10.1109/LED.2011.2181323

Kim, 2015, Lg=80-nm tri-gate quantum well In0.53Ga0.47As metal oxide semiconductor field effect transistors with Al2O3/HfO2 gate stack, IEEE Electron Device Lett, 36, 223, 10.1109/LED.2015.2393554

Kim, 2012, Lg=60nm recessed In0.7Ga0.3As MOSFETs with Al2O3 insulator, Appl Phys Lett, 101, 10.1063/1.4769230

Chen, 2011, ZrO2-Based InP MOSFETs (EOT=1.2nm) using various interfacial dielectric layers, ECS Trans, 35, 375, 10.1149/1.3569930

Chobpattana, 2014, Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities, J Appl Phys, 116, 10.1063/1.4896494

Ok, 2008, Self aligned n-channel MOSFET on high indium content In0.53Ga0.47As and InP using physical vapour deposition HfO2 and silicon interface passivation layer, Appl Phys Lett, 92, 10.1063/1.2920438

Wu, 2009, 0.8-V supply voltage deep sub micrometer inversion mode In0.75Ga0.25As MOSFET, IEEE Electron Device Lett, 30, 700, 10.1109/LED.2009.2022346

Nirmal, 2013, Nanoscale channel engineered double gate MOSFET for mixed signal application using high-k dielectric, Int J Circuit Theory Appl, 41, 608, 10.1002/cta.1800

Kim TW, Hill RJW, Young CD. InAs Quantum-Well MOSFET (Lg=100nm) with Record High gm, fT and fmax. Symposium on VLSI Technology Digest of Technical Papers, Honolulu: IEEE; June; 2012, p. 179–80.

Sun Y, Kiewra EW, de Souza JP. Scaling of In0.7Ga0.3As buried channel MOSFETS. In: Proc. IEDM Tech. Dig., San Francisco, December; 2008, p. 1–4.

Kim, 2013, High-speed E-Mode InAs QW MOSFETs With Al2O3 insulator for future RF applications, IEEE Electron Device Lett, 34, 196, 10.1109/LED.2012.2229107

Galatage, 2011, Effect of post deposition anneal on the characteristics of HfO2/InP metal oxide semiconductor capacitors, Appl Phys Lett, 99, 10.1063/1.3656001

Galatage, 2013, Electrical and chemical characteristics of Al2O3/InP metal-oxide semiconductor capacitors, Appl Phys Lett, 102, 10.1063/1.4799660

Min, 2013, New insights in the passivation of high-k/InP through interface characterization and Metal–Oxide–Semiconductor Field Effect Transistor demonstration: impact of crystal orientation, J Appl Phys, 113, 10

Charles Praveen, 2016, Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-K dielectrics for low power applications, Phys E, 83, 95, 10.1016/j.physe.2016.04.017