Phân tích tiếng ồn vi sóng trong transistor HEMT InAs cấu trúc giếng lượng tử đôi chế độ nâng cao

Springer Science and Business Media LLC - Tập 18 - Trang 1280-1290 - 2019
R. Poornachandran1, N. Mohankumar1, R. Saravanakumar2, G. Sujatha3
1ECE, SKP Engineering College, Anna University, Chennai, India
2ECE, Bannari Amman Institute of Technology, Anna University, Chennai, India
3ECE, Arunai Engineering College, Anna University, Chennai, India

Tóm tắt

Một nghiên cứu lý thuyết có hệ thống được tiến hành về hiệu suất tiếng ồn vi sóng của transistor HEMT kép cửa có giếng lượng tử đôi dựa trên InAs. Transistor HEMT giếng lượng tử đôi được đề xuất cho thấy hiệu suất tiếng ồn và hiệu suất tần số vô tuyến (RF) tín hiệu nhỏ nổi bật. Kết quả cho một thiết bị có chiều dài cổng 30 nm cho thấy hoạt động chế độ nâng cao với điện áp ngưỡng (Vt) là 0,146 V và độ dẫn điện cực cao 4,77 S/mm, cùng với tần số cắt (ft) là 810 GHz và tần số dao động tối đa (fmax) đạt 900 GHz khi Vds = 0,5 V với điện dung rò rỉ (Cgg) giảm xuống 0,003 pF/mm. Tiếng ồn tần số cao của thiết bị này được ước tính từ mật độ phổ tiếng ồn cổng và cống được đánh giá bằng phương pháp hàm Green trong các điều kiện phân cực khác nhau. Thiết bị này cho thấy chỉ số tiếng ồn tối thiểu (NFmin) là 1,62 dB kết hợp với điện trở tiếng ồn tương đương 972 Ω tại 810 GHz cho Vgs = 0,6 V và Vds = 0,5 V, điều này tương đối thấp và phù hợp cho thiết kế của các khuyếch đại tiếng ồn thấp trong các ứng dụng tần số cao. Nghiên cứu này cho thấy rằng một transistor HEMT InAs với cấu trúc giếng lượng tử đôi là rất thích hợp để sử dụng trong các ứng dụng tần số cao hơn yêu cầu tiếng ồn thấp.

Từ khóa

#HEMT #InAs #giếng lượng tử đôi #tiếng ồn vi sóng #tần số cao #khuyếch đại tiếng ồn thấp

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