Analysis, fabrication, and characterization of 1.55-μm selection-free tapered stripe DFB lasers

IEEE Photonics Technology Letters - Tập 14 Số 8 - Trang 1040-1042 - 2002
F. Grillot1, B. Thedrez1, F. Mallecot1, C. Chaumont1, S. Hubert1, M.F. Martineau1, A. Pinquier1, L. Roux1
1Alcatel Research and Innovation, Alcatel OPTO, Marcoussis, France

Tóm tắt

A new selection-free laser structure for monomode behavior based on an engineering of the stripe geometry is proposed. The structure is designed in order to eliminate facet phase effects and laser to laser variations. The effect of spatial hole burning is simulated and an enhancement of the sidemode suppression ratio (SMSR) with power is predicted and measured. Moreover, the sensitivity to technological fluctuations is theoretically analyzed. Experimentally, lasers having a 47-dB SMSR at 10 mW and an excellent homogeneity from laser to laser is obtained on a two inch wafer.

Từ khóa

#Laser theory #Laser modes #Optical device fabrication #Gratings #Optical control #Power engineering and energy #Geometrical optics #Optical design #Power measurement #Fluctuations

Tài liệu tham khảo

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