Analog and Digital Performance of Graphene-Germanene-Graphene Heterojunction Based Field Effect Transistor

ECS Journal of Solid State Science and Technology - Tập 11 Số 9 - Trang 091005 - 2022
Mehran Vali1
1School of Physics, Damghan University, Damghan, Iran

Tóm tắt

In this study, by taking the advantage of electrical properties of graphene, silicene and germanene sheets we propose and analyze a heterojunction based field effect transistor. It is comprised of germanene sheet in the channel and gapless graphene in the source/drain regions. We investigate and compare the performances of proposed device from two points of view comprised of analog and digital applications. A comparative study is carried out with three other simulated devices including gapless graphene, germanene and graphene-silicene-graphene heterojunction based field effect transistors. Our theoretical analysis show that for digital applications, Ion/Ioff ratio in the proposed graphene-germanene-graphene (G-Ge-G) heterojunction based field effect transistor shows a significant better value than other counterpart simulated devices and reaches to 106. However for the analog applications, the output characteristic curves show different behavior for the simulated devices under study. The output characteristic of (G-Ge-G) heterojunction based field effect transistor displays a very good saturation which owes to improved pinch-off in the channel.

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ECS Journal of Solid State Science and Technology

Tập 11 Số 9

091005

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