Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Silicon - Tập 14 - Trang 7363-7376 - 2021
Suddapalli Subba Rao1, Rani Deepika Balavendran Joseph2, Vijaya Durga Chintala3, Gopi Krishna Saramekala4, D. Srikar3, Nistala Bheema Rao3
1Department of ECE, Vasavi College of Engineering, Hyderabad, India
2Department of Electrical Engineering, University of North Texas, Denton, USA
3Department of ECE, NIT Warangal, Telangana, India
4Department of ECE, NIT Calicut, Kerala, India

Tóm tắt

In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of transconductance-generation-factor (TGF), early voltage, voltage gain, unity-power-gain frequency (fmax), unity-current-gain frequency (ft), and gain-transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDG-JL s-Si MOSFET has superior analog/RF performance compared to gate stack-graded channel double gate-junctionless (GS-GCDG-JL) s-Si device. However, the proposed MOSFET has less transconductance and less output conductance when compared with the GS-GCDG-JL s-Si device in above threshold region, and reverse trend follows in sub-threshold region.

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