E. Peytavit1, S. Arscott1, D. Lippens1, G. Mouret2, P. Masselin2, S. Matton2, R. Bocquet3, J.F. Lampin3, L. Desplanque3, F. Mollot2
1Institut dE28099Electronique et de Microélectronique de Nord, University of Lille (USTL), France
2Laboratoire de physico-chimie de lE28099atmospherére, University of Littoral-Cote dE28099Opale, Dunkerque, France
3Institut eE28099Electronique et de Microélectronique de Nord, University of Lille (USTL), France
Tóm tắt
We report on the development of an-ultra-broad band photoconductive detector, based on low-temperature-grown GaAs, vertically-integrated with terahertz spiral antennas. Velocity overshoot was expected in the photo-response facing the dramatic decrease in conversion efficiency due to a very short carrier lifetime. Photomixing experiments with two optical 0.8 /spl mu/m laser beating shows a 3-dB bandwidth of 700 GHz with radiation power at terahertz frequency of 0.1 /spl mu/W under moderate optical pumping and bias voltages. Preliminary results are also reported at long wavelengths taking advantage of the sub-gap absorption tail for non-annealed samples.