An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

Springer Science and Business Media LLC - Tập 1 - Trang 1-15 - 2019
S. Chrisben Gladson1, Adith Hari Narayana1, M. Bhaskar1
1National Institute of Technology, Trichy, India

Tóm tắt

The wireless communication in the next generation is bound to be driven by massive machine-type communication or in other words Internet-of-things (IoT). In the near future, the need for effective communication and higher data processing rates will require IoT devices to support 5G networks. For 5G IoT applications in the ultra-wideband range (3.1–10.6 GHz), the analog receivers must provide both high-performance and energy efficiency simultaneously. This work addresses the demands of 5G IoT analog receivers by proposing an ultra-low-power low noise amplifier (LNA) employing cross-coupled positive shunt feedback. The proposed LNA is designed in UMC 180 nm deep n-well process, and the post-layout characterization is done using Cadence SpectreRF. The proposed design achieves a peak gain of 9.94 dB and a noise figure of 3.2–1.086 dB along the usable bandwidth of 3.2–9.625 GHz while consuming an ultra-low-power of 493 µW from a 1-V power supply. The maximum input-referred third-order intercept point of 8.81 dBm is attained for an input signal at 2.4 GHz and the interferer as close as 2.425 GHz. The LNA consumes a minimal layout area of only 676.2 µm × 350.7 µm. The proposed LNA has the better figure-of-merit while consuming almost 50% less power than the recently reported sub-mW LNA in literature.

Tài liệu tham khảo

Mattisson S (2018) An overview of 5G requirements and future wireless networks. IEEE Solid State Circuits Mag 10(3):54–60 Ericsson (2017) Ericsson mobility report. http://www.ericsson.com/mobility-report Ericsson (2014) Ericsson mobility report. https://www.ericsson.com/assets/local/mobility/report/documents/2014/ericsson-mobility-report-november-2014.pdf Ericsson (2016). Ericsson mobility report. https://www.ericsson.com/assets/local/mobility/report/documents/2016/ericsson-mobility-report-november-2016.pdf International Telecommunication Union. http://www.itu.int/ GPP. http://www.3gpp.org/ Lund University (2016) Massive MIMO mobility tests. https://www.youtube.com/watch?v=wPPMrr4rHmo University of Bristol (2016) Bristol and Lund once again set new world record in 5G wireless spectrum efficiency. http://www.bristol.ac.uk/news/2016/may/5g-wireless-spectrum-efficiency.html Ericsson (2017) Ericsson, SK Telecom and BMW Group Korea reach new world record speed with 5G. https://www.ericsson.com/en/news/2017/2/ericsson-sk-telecom-and-bmw-group-korea-reach-new-world-record-speed-with-5g Dahlman E, Parkvall S, Sköld J (2018) 5G NR: the next generation wireless access technology. Academic Press, Cambridge Tommy K, Lin KY, El-Gamal MN (2008) Design techniques of CMOS ultra-wide-band amplifiers for multistandard communications. IEEE Trans Circuits Syst II Express Briefs 55(3):214–218 Shekhar S, Walling JS, Allstot DJ (2006) Bandwidth extension techniques for CMOS amplifiers. IEEE J Solid-State Circuits 41(11):2424–2439 Sunderarajan SS, Hershenson MD, Boyd SP, Lee TH (2000) Bandwidth extension in CMOS with optimized on-chip inductors. IEEE J Solid State Circuits 55(3):346–355 Shekhar S, Li X, Allstot DJ (2006) A CMOS 3.1-10.6 GHz UWB LNA employing stagger-compensated series peaking. In: IEEE radio frequency integrated circuits Walling JS, Shekhar S, Allstot DJ (2008) Wideband CMOS amplifier design time-domain considerations. IEEE Trans Circuits Syst I Regul Pap 55(7):1781–1793 Feng G, Boon CC, Meng F, Yi X, Yan K, Li C, Luong HC (2017) Pole-converging intrastage bandwidth extension technique for wideband amplifiers. IEEE J Solid State Circuits 52(3):769–780 Ebrahimi A, Bastan Y, Ebrahimi E, Shamsi H (2015) Exploiting cross-coupled and body-driven techniques for noise cancellation of an inductor-less wideband LNA. AEUE Int J Electron Commun 69(4):708–714. https://doi.org/10.1016/j.aeue.2014.12.014 Wan Q, Wang Q, Zheng Z (2014) Design and analysis of a 3.1–10.6 GHz UWB low noise amplifier with forward body bias technique. AEU Int J Electron Commun 69(1):119–125 Im D, Lee I-Y (2016) A high IIP2 broadband CMOS low-noise amplifier with a dual-loop feedback. IEEE Trans Microw Theory Tech 64(7):2068–2079 Saberkari A, Kazemi S, Shirmohammadli V, Yagoub MCE (2016) gm-boosted flat gain UWB low noise amplifier with active inductor-based input matching network. Integr VLSI J 52:323–333 Sahafi A, Sobhi J, Koozehkanani ZD (2016) Linearity improvement of gm-boosted common gate LNA: analysis to design. Microelectron J 56:156–162 Jafarnejad R, Jannesari A, Sobhi J (2017) A sub-2 dB noise figure linear wideband low noise amplifier in 0.18 μm CMOS. Microelectron J 67:1135–1142 Nan li, Weiwei Feng, and Xiuping Li. A CMOS 3-12-GHz Ultrawideband Low Noise Amplifier by Dual-Resonance Network. IEEE Microwave and Wireless Components Letters (2017). 27 (4): pp.383-385 Tey YY, Ramiah H, Noh NM, Jagadheswaran UR (2017) A 50 MHz ~ 10 GHz, 3.3 dB NF, +6 dBm IIP3 resistive feedback common source amplifier for cognitive radio application. Microelectron J 61:89–94 Yan X, Chen C, Yang L, Zhang J, Lin F (2017) A 0.-1.1 GHz inductorless differential LNA with double gm-boosting and positive feedback. Analog Integr Circuits Signal Process 93(2):205–215 Zahir Z, Banerjee G, Zeidan MA, Abraham JA (2017) A multi-band low noise amplifier with strong immunity to interferers. Analog Integr Circuits Signal Process 93(1):13–27 Eskandari R, Ebrahimi A, Sobhi J (2018) A wideband noise cancelling balun LNA employing current reuse technique. Microelectron J 76:1–7 Hayati M, Cheraghaliei S, Zarghami S (2018) Design of UWB low noise amplifier using noise-cancelling and current-reused techniques. Integr VLSI J 60:232–239 Pandey S, Gawande T, Inge S, Pathak A, Kondekar PN (2018) Design and analysis of wideband low-power LNA for improved RF performance with compact chip area. IET Microw Antennas Propag 12:1816–1820 Zokaei A, Amirabadi A (2018) A 65 nm linear broad-band differential low noise amplifier using post distortion technique. Microelectron J 74:24–33 Parvizi M, Allidina K, Nabki F, El-Gamal M (2013) A 0.4 V ultra low-power UWB CMOS LNA employing noise cancellation. In: IEEE international symposium on circuits and systems Li Z, Sun L, Huang L (2014) 0.4 mW wideband LNA with double gm enhancement and feed-forward noise cancellation. Electron Lett 50(5):400–401 Parvizi M, Allidina K, El-Gamal MN (2015) A sub-mW, ultra-low-voltage, wideband low-noise amplifier design technique. IEEE Trans Very Large Scale Integr (VLSI) Syst 23(6):1111–1122 Arshad S, Ramzan R, Muhammad K, Wahab QL (2014) A sub-10 mW, noise cancelling, wideband LNA for UWB applications. AEU Int J Electron Commun 69(1):109–118 Pandey S, Singh J (2015) A low power and high gain CMOS LNA for UWB applications in 90 m CMOS process. Microelectron Jurnal 46:390–397 Parvizi M, Allidina K, El-Gamal MN (2015) Short channel output conductance enhancement through forward body biasing to realize a 0.5 V 250 μW 0.6–4.2 GHz current-reuse CMOS LNA. IEEE J Solid State Circuits 51(3):574–586 Jafarnejad R, Jannesari A, Nabavi A, Sahafi A (2016) A low power low noise amplifier employing negative feedback and current reuse techniques. Microelectron J 49:49–56 Parvizi M, Allidina K, El-Gamal MN (2016) An ultra-low-power wideband inductorless CMOS LNA with tunable active shunt-feedback. IEEE Trans Microw Theory Tech 64(6):1843–1853 Khabbaz A, Sobhi J, Koozehkanani ZD (2018) A sub-mW 2.9-dB noise figure inductor-less low noise amplifier for wireless sensor network applications. AEU Int J Electron Commun 93:132–139 Pan Z, Qin C, Ye Z, Wang Y, Zhiping Yu (2018) Wideband inductorless low-power LNAs with Gm enhancement and noise-cancellation. IEEE Trans Circuits Syst I Regul Pap 65(1):26–38 Chang CH, Onbajo M (2018) Analysis and demonstration of an IIP3 improvement technique for low-power RF low-noise amplifiers. IEEE Trans Circuits Syst I Regul Pap 65(3):859–869 Jussila J, Sivonen P (2008) A 1.2-V highly linear balanced noise-cancelling LNA in 0.13-μm CMOS. IEEE J Solid State Circuits 43(3):579–587 Guo B, Chen J, Jin H (2016) A linearized common-gate low-noise amplifier using active cross-coupled feedback technique. Analog Integr Circuits Signal Process 89(1):239–248 Mohammadi I, Sahafi A, Sobhi J, Koozehkanani ZD (2015) A linear, low power, 2.5-dB NF LNA for UWB application in a 0.18 μm CMOS. Microelectron J 46(12):1398–1408 Ma L, Wang ZG, Xu J, Amin NM (2017) A high linearity wideband common-gate LNA with differential active inductor. IEEE Trans Circuits Syst II Express Briefs 64(4):402–406 Jafarnejad R, Jannesari A, Sobhi J (2017) Pre-distortion technique to improve linearity of low noise amplifier. Microelectron J 61:95–105 Huang D, Yang X, Chen H, Khan MI, Lin F (2018) A 0.3-3.5 GHz active-feedback low-noise amplifier linearization design for wideband receivers. AEU Int J Electron Commun 84:192–198 Zhang H, Sánchez-Sinencio E (2011) Linearization techniques for CMOS low noise amplifiers: a tutorial. IEEE Trans Circuits Syst I Regul Pap 58(1):22–36 Allidina K, El-Gamal MN (2008) A V CMOS LNA for low power ultra-wideband systems. In: IEEE international conference on electronics, circuits, and systems, pp 165–168 Perumana BG, Zhan J-HC, Taylor SS, Carlton BR, Laskar J (2008) Resistive-feedback CMOS low-noise amplifiers for multiband applications. IEEE Trans Microw Theory Tech 56(5):1218–1225 Borremans J, Wambacq P, Soens C, Rolain Y, Kuijk M (2008) Low-area active-feedback low-noise amplifier design in scaled digital CMOS. IEEE J Solid State Circuits 43(11):2422–2433 Sobhy EA, Helmy AA, Hoyos S, Entesari K, Sanchez-Sinencio E (2011) A 2.8 mW sub-2-dB noise-figure inductorless wideband CMOS LNA employing multiple feedback. IEEE Trans Microw Theory Tech 59(12):3154–3161 Lai M-T, Tsao H-W (2013) Ultra-low-power cascaded CMOS LNA with positive feedback and bias optimization. IEEE Trans Microw Theory Tech 61(5):1934–1945 Bastos I, Oliveira LB, Goes J, Oliveira JP, Silva M (2016) Noise cancelling LNA with gain enhancement by using double feedback. Integr VLSI J 52:309–315 Barnes JA, Allan DW (1966) A statistical model of flicker noise. Proc IEEE 54(2):176–178 Roy AS, Kim S, Mudanai SP (2017) An improved flicker noise model for circuit simulations. IEEE Trans Electron Dev 64(4):1689–1694 Wang B, Hellums JR, Sodini CG (1994) MOSFET thermal noise modeling for analog integrated circuits. IEEE J Solid State Circuits 29(7):833–835 Tedja S, Van der Spiegel J, Williams HH (1994) Analytical and experimental studies of thermal noise in MOSFET’s. IEEE Trans Electron Dev 41(11):2069–2075 Triantis DP, Birbas AN, Kondis D (1996) Thermal noise modeling for short-channel MOSFET’s. IEEE Trans Electron Dev 43(11):1950–1955 Aparin V et al (1999) Effect of out-of-band termination on intermodulation distortion in common emitter circuits. IEEE MTT-S digest, pp 977–980 Van Langevelde R, Klassen DB (1997) Accurate drain conductance modeling for distortion analysis in MOSFETs. In: Proceedings of IEDM’97, pp 313–316 Van Langevelde R, Tiemeijer LF, Havens RJ, Knitel MJ, Roes RF, Woerlee PH, Klassen DB (2000) RF-distortion in deep-submicron CMOS technologies. In: Proceedings of IEDM’00, pp 807–811 Wambacq P, Sansen W (1998) Distortion analysis of analog integrated circuits. Kluwer, Boston Wambacq P, Gielen G, Kinget P, Sansen W (1999) High-frequency distortion analysis of analog integrated circuits. IEEE Trans Circuits Syst II 46:335–345 Soorapanth T, Lee T (1997) RF linearity of short-channel MOSFETS. In: Proceedings of 1st international workshop on design of mixed-mode integrated circuits and applications, Cancun, Mexico, pp 81–84 Huang Q, Piazza F, Orsatti P, Ohguro T (1998) The impact of scaling down to deep submicron on CMOS RF circuits. IEEE J Solid State Circuits 33:1023–1037 Kim B, Ko JS, Lee K (2001) Highly linear CMOS RF MMIC amplifier using multiple gated transistors and its Volterra series analysis. IEEE MTT-S 1:515–518 Kang S, Choi B, Kim B (2003) Linearity analysis of CMOS for RF application. IEEE Trans Microw Theory Tech 51(3):972–977 Toole B, Plett C, Cloutier M (2004) RF circuit implications of moderate inversion enhanced linear region in MOSFETs. IEEE Trans Circuits Syst I Regul Pap 51(2):319–328 Lee T-Y, Cheng Y (2004) High-frequency characterization and modeling of distortion behavior of MOSFETs for RF IC design. IEEE J Solid-State Circuits 39(9):1407–1414 Liang Q, Andrews JM, Cressler JD, Niu G (2005) Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model. IEEE Trans Microw Theory Tech 53(5):1745–1755 Baki RA, Tsang TKK, El-Gamal MN (2006) Distortion in RF CMOS short-channel low-noise amplifiers. IEEE Trans Microw Theory Tech 54(1):46–56 Lewinski A, Silva-Martinez J (2006) A high-frequency transconductor using a robust nonlinearity cancellation. I. IEEE Trans Circuits Syst II Express Briefs 53(9):896–900 Gladson SC, Bhaskar M (2018) A low power high-performance area efficient RF front-end exploiting body effect for 2.4 GHz IEEE 802.15.4 applications. Int J Electron Commun 96:81–92