An overview of materials issues in resistive random access memory

Han, 2013, Towards the development of flexible non-volatile memories, Adv Mater, 25, 5425, 10.1002/adma.201301361

Akinaga, 2012, ReRAM technology; challenges and prospects, IEICE Electron Express, 9, 795, 10.1587/elex.9.795

Seok, 2014, A review of three-dimensional resistive switching cross-bar array memories from the integration and materials property points of view, Adv Funct Mater, 24, 5316, 10.1002/adfm.201303520

Akinaga, 2010, Resistive random access memory (ReRAM) based on metal oxides, Proc IEEE, 98, 2237, 10.1109/JPROC.2010.2070830

Zhang, 2014, An overview of the switching parameter variation of RRAM, Chin Sci Bull, 59, 5324, 10.1007/s11434-014-0673-z

Pan, 2014, Recent progress in resistive random access memories: materials, switching mechanisms, and performance, Mater Sci Eng R-Rep, 83, 1, 10.1016/j.mser.2014.06.002

Yang, 2013, Memristive devices for computing, Nat Nanotech, 8, 13, 10.1038/nnano.2012.240

Tian, 2013, Recent development of studies on the mechanism of resistive memories in several metal oxides, Sci China-Phys Mech Astron, 56, 2361, 10.1007/s11433-013-5341-9

Prakash, 2013, TaO(x) -based resistive switching memories: prospective and challenges, Nanoscale Res Lett, 8, 418, 10.1186/1556-276X-8-418

Doo Seok, 2012, Emerging memories: resistive switching mechanisms and current status, Rep Prog Phys, 75, 076502, 10.1088/0034-4885/75/7/076502

Li, 2011, An overview of resistive random access memory devices, Chin Sci Bull, 56, 3072, 10.1007/s11434-011-4671-0

Kyung Min, 2011, Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook, Nanotechnology, 22, 254002, 10.1088/0957-4484/22/25/254002

Cho, 2011, Organic resistive memory devices: performance enhancement, integration, and advanced architectures, Adv Funct Mater, 21, 2806, 10.1002/adfm.201100686

Waser, 2009, Redox-based resistive switching memories – nanoionic mechanisms, prospects, and challenges, Adv Mater, 21, 2632, 10.1002/adma.200900375

Zhu, 2012, Resistive switching effects in oxide sandwiched structures, Front Mater Sci, 6, 183, 10.1007/s11706-012-0170-8

Hickmott, 1962, Low-Frequency negative resistance in thin anodic oxide films, J Appl Phys, 33, 2669, 10.1063/1.1702530

Liang, 2015, Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device, J Am Chem Soc, 137, 3102, 10.1021/jacs.5b00021

Kim, 2015, Self-limited switching in Ta2O5/TaOx memristors exhibiting uniform multilevel changes in resistance, Adv Funct Mater, 25, 1527, 10.1002/adfm.201403621

Chen, 2015, High-performance HfOx/AlOy-based resistive switching memory cross-point array fabricated by atomic layer deposition, Nanoscale Res Lett, 10, 70, 10.1186/s11671-015-0738-1

Chang, 2015, Physical and chemical mechanisms in oxide-based resistance random access memory, Nanoscale Res Lett, 10, 120, 10.1186/s11671-015-0740-7

Chand, 2015, Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory, Appl Phys Lett, 106, 153502, 10.1063/1.4918679

Zhou, 2014, Study of the bipolar resistive-switching behaviors in Pt/GdOx/TaNx structure for RRAM application, Phys Status Solidi A, 211, 173, 10.1002/pssa.201330098

Yan, 2014, Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure, Appl Phys Lett, 105, 093502, 10.1063/1.4894521

Sun, 2014, Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device, J Appl Phys, 116, 154509, 10.1063/1.4898807

Nieh, 2014, Resistive memory of single SnO2 nanowire based switchable diodes, Appl Phys Lett, 104, 213501, 10.1063/1.4880210

Koza, 2014, Electrochemical synthesis and nonvolatile resistance switching of Mn3O4 thin films, Chem Mater, 26, 4425, 10.1021/cm5014027

Ji, 2014, Integrated one Diode–One resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography, Nano Lett, 14, 813, 10.1021/nl404160u

Ismail, 2014, Forming-free bipolar resistive switching in nonstoichiometric ceria films, Nanoscale Res Lett, 9, 1, 10.1186/1556-276X-9-45

Zhao, 2013, Characteristics and mechanism of nano-polycrystalline La2O3 thin-film resistance switching memory, Phys Status Solidi RRL, 7, 1005, 10.1002/pssr.201308068

Zhang, 2013, Conduction mechanism of resistance switching in fully transparent MgO-based memory devices, J Appl Phys, 114, 134301, 10.1063/1.4821900

Park, 2013, In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure, Nat Commun, 4, 2382, 10.1038/ncomms3382

Long, 2013, Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO2-based RRAM, Sci Rep, 3, 2929, 10.1038/srep02929

Kim, 2013, Investigation of analog memristive switching of iron oxide nanoparticle assembly between Pt electrodes, J Appl Phys, 114, 224505, 10.1063/1.4846759

Chao, 2013, High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device, Nanotechnology, 24, 355203, 10.1088/0957-4484/24/35/355203

Sadaf, 2012, Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices, Phys Status Solidi A, 209, 1179, 10.1002/pssa.201127659

Rahaman, 2012, Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film, Appl Phys Lett, 101, 073106, 10.1063/1.4745783

Mondal, 2012, Effect of Ti doping concentration on resistive switching behaviors of Yb2O3 memory cell, Appl Phys Lett, 101, 083506, 10.1063/1.4747695

Huang, 2012, Improvement of resistive switching in NiO-based nanowires by inserting Pt layers, Appl Phys Lett, 101, 153106, 10.1063/1.4758482

Tohru, 2011, Temperature effects on the switching kinetics of a Cu–Ta2O5 -based atomic switch, Nanotechnology, 22, 254013, 10.1088/0957-4484/22/25/254013

Pi, 2011, Unipolar memristive switching in yttrium oxide and RESET current reduction using a yttrium interlayer, Electrochem Solid-State Lett, 15, G5, 10.1149/2.008203esl

Lee, 2011, A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures, Nat Mater, 10, 625, 10.1038/nmat3070

Chen, 2011, Bipolar resistive switching of chromium oxide for resistive random access memory, Solid State Electron, 62, 40, 10.1016/j.sse.2010.12.014

Gao, 2010, Unipolar resistive switching characteristics in Co3O4 films, Thin Solid Films, 519, 450, 10.1016/j.tsf.2010.07.075

Yang, 2009, Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices, Appl Phys Lett, 95, 042105, 10.1063/1.3191674

Shima, 2008, Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode, Appl Phys Lett, 93, 113504, 10.1063/1.2982426

Chen, 2008, Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory, Appl Phys Lett, 92, 013503, 10.1063/1.2828864

Lee, 2007, Resistance switching of copper doped MoOx films for nonvolatile memory applications, Appl Phys Lett, 90, 122104, 10.1063/1.2715002

Qin, 2012, A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion, Nanoscale, 4, 6658, 10.1039/c2nr31180a

Hu, 2012, Electrically controlled electron transfer and resistance switching in reduced graphene oxide noncovalently functionalized with thionine, J Mater Chem, 22, 16422, 10.1039/c2jm32121a

Schroeder, 2010, Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells, J Appl Phys, 107, 054517, 10.1063/1.3319591

Shang, 2014, Thermally stable transparent resistive random access memory based on all-oxide heterostructures, Adv Funct Mater, 24, 2171, 10.1002/adfm.201303274

Hu, 2014, Highly controllable and stable quantized conductance and resistive switching mechanism in single-crystal TiO2 resistive memory on silicon, Nano Lett, 14, 4360, 10.1021/nl501249q

Kim, 2010, Nanoscale imaging and control of resistance switching in VO2 at room temperature, Appl Phys Lett, 96, 213106, 10.1063/1.3435466

Xinjun, 2011, Diode-less bilayer oxide (WOx–NbOx ) device for cross-point resistive memory applications, Nanotechnology, 22, 475702, 10.1088/0957-4484/22/47/475702

Nakamura, 2013, Electric-field-induced metal maintained by current of the Mott insulator Ca2RuO4, Sci Rep, 3, 2536, 10.1038/srep02536

Park, 2013, Measurement of a solid-state triple point at the metal-insulator transition in VO2, Nature, 500, 431, 10.1038/nature12425

Jeong, 2013, Suppression of metal-insulator transition in VO2 by Electric Field–Induced oxygen vacancy formation, Science, 339, 1402, 10.1126/science.1230512

Cario, 2010, Electric-field-induced resistive switching in a family of Mott insulators: towards a new Class of RRAM memories, Adv Mater, 22, 5193, 10.1002/adma.201002521

Dubost, 2013, Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8, Nano Lett, 13, 3648, 10.1021/nl401510p

Choi, 2005, Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition, J Appl Phys, 98, 033715, 10.1063/1.2001146

Gao, 2015, Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system, Phys Chem Chem Phys, 17, 12849, 10.1039/C5CP01235J

Yang, 2010, Multilevel resistance switching in Cu/TaOx/Pt structures induced by a coupled mechanism, J Appl Phys, 107, 093701, 10.1063/1.3399152

Zhang, 2014, Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device, Appl Phys Lett, 105, 063508, 10.1063/1.4893325

Xue, 2013, Prediction of semimetallic tetragonal Hf2O3 and Zr2O3 from first principles, Phys Rev Lett, 110, 065502, 10.1103/PhysRevLett.110.065502

Zhu, 2015, Realization of a reversible switching in TaO2 polymorphs via Peierls distortion for resistance random access memory, Appl Phys Lett, 106, 091903, 10.1063/1.4913904

Oganov, 2011, How evolutionary crystal structure prediction works—and why, Acc Chem Res, 44, 227, 10.1021/ar1001318

Oganov, 2006, Crystal structure prediction using ab initio evolutionary techniques: principles and applications, J Chem Phys, 124, 244704, 10.1063/1.2210932

Wang, 2010, Crystal structure prediction via particle-swarm optimization, Phys Rev B, 82, 094116, 10.1103/PhysRevB.82.094116

Wang, 2012, CALYPSO: a method for crystal structure prediction, Comput Phys Commun, 183, 2063, 10.1016/j.cpc.2012.05.008

Chris, 2011, Ab initio random structure searching, J Phys Condens Matter, 23, 053201, 10.1088/0953-8984/23/5/053201

Guo, 2014, Materials selection for oxide-based resistive random access memories, Appl Phys Lett, 105, 223516, 10.1063/1.4903470

Wu, 2011, Current–voltage characteristics of sol–gel derived SrZrO3 thin films for resistive memory applications, J Alloys Compd, 509, 2050, 10.1016/j.jallcom.2010.10.134

Guo, 2013, Role of oxygen vacancies in the resistive switching of SrZrO3 for resistance random access memory, J Alloys Compd, 580, 148, 10.1016/j.jallcom.2013.05.030

Guo, 2015, Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory, J Mater Chem C, 3, 4081, 10.1039/C5TC00302D

Onofrio, 2015, Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells, Nat Mater, 14, 440, 10.1038/nmat4221

Martin, 2012, Multiferroic and magnetoelectric heterostructures, Acta Mater, 60, 2449, 10.1016/j.actamat.2011.12.024

Sun, 2009, Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 Alloy, Phys Rev Lett, 102, 075504, 10.1103/PhysRevLett.102.075504

Sun, 2007, Unique melting behavior in phase-change materials for rewritable data storage, Phys Rev Lett, 98, 055505, 10.1103/PhysRevLett.98.055505

Sun, 2006, Structure of phase change materials for data storage, Phys Rev Lett, 96, 055507, 10.1103/PhysRevLett.96.055507

Deringer, 2013, DFT studies of pristine hexagonal Ge1Sb2Te4(0001), Ge2Sb2Te5(0001), and Ge1Sb4Te7(0001) surfaces, J Phys Chem C, 117, 15075, 10.1021/jp401400k

Zhang, 2014, How fragility makes phase-change data storage robust: insights from ab initio simulations, Sci Rep, 4, 6529, 10.1038/srep06529

Zhang, 2012, Role of vacancies in metal–insulator transitions of crystalline phase-change materials, Nat Mater, 11, 952, 10.1038/nmat3456

Zhu, 2014, One order of magnitude faster phase change at reduced power in Ti-Sb-Te, Nat Commun, 5, 4086, 10.1038/ncomms5086