An integrated equivalent circuit model for relative intensity noise and frequency noise spectrum of a multimode semiconductor laser

IEEE Journal of Quantum Electronics - Tập 38 Số 10 - Trang 1366-1371 - 2002
E. Mortazy1,2, V. Ahmadi3,1, M.K. Moravvej-Farshi1,2
1Department of Electronic Engineering, Tarbiat Moalem University, Tehran, Iran
2Optical ommunication Group, Iran Telecommunication Research Center, Tehran, Iran
3Laser Research Center, Atomic Energy Organization, Iran, Tehran, Iran

Tóm tắt

Relative intensity noise (RIN) and the frequency/phase noise spectrum (FNS) equivalent circuit of a multimode semiconductor laser diode are derived from multimode rate equations with the inclusion of noise Langevin sources. FNS is an important parameter in optical communication systems, and its circuit model is presented, for the first time, in this paper. Both circuit models for RIN and FNS are integrated in one circuit. RIN and FNS are calculated as functions of frequency, output power, and mode number. It is shown that the RIN of the main mode is increased in the multimode lasers with higher mode numbers. Furthermore, we show that RIN and FNS are enhanced for higher output power. The dependency of a multimode laser diode linewidth on output power is also analyzed using the model.

Từ khóa

#Semiconductor device noise #Equivalent circuits #Frequency #Laser modes #Laser noise #Semiconductor lasers #Optical noise #Phase noise #Power generation #Diode lasers

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