An improved lumped-charge model and parameter extraction approach of PIN diodes
2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289) - Tập 3 - Trang 1301-1304 vol.3
Tóm tắt
An improved lumped-charge model of PIN diodes is described. This model includes reverse and forward recovery, emitter recombination and boundary-moving effects. Especially for reverse recovery, both sweeping out and recombination effects are taken into account Based on the model, most parameters can be extracted by a new accurate curve-fitting approach, and the other can be obtained by simple experiments. Comparison between simulation and experimental results for transient behavior verifies the model and the parameter extraction approach.
Từ khóa
#Parameter extraction #Equations #Circuit simulation #Physics #Curve fitting #Voltage #Educational institutions #Power electronics #Stress #Frequency conversionTài liệu tham khảo
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