An analytical capacitance model for a hydrogenated amorphous silicon based thin-film transistor

Physics Procedia - Tập 21 - Trang 122-127 - 2011
Z. Hafdi1
1Advanced Electronics Laboratory, Department of Electrical Engineering, 05000 Batna University, Algeria

Tài liệu tham khảo

Kasano, 2006, IEEE Trans. Electron Devices, 53, 611, 10.1109/TED.2006.870286 Wang, 2007, Solid-State Electron, 51, 703, 10.1016/j.sse.2007.02.030 Bae, 2006, IEEE Trans. Electron Devices, 53, 494, 10.1109/TED.2005.864383 Choi, 2006, J. Korean Phys. Soc, 48, S981 KR. Wissmiller, JE. Knudsen, TJ. Alward, ZP. Li, DR. Allee, T. Clark, IEEE 2005 Proc. Custom Integrate Circuits Conf. (2005) 219. KR. Wissmiller, JE. Knudsen, TJ. Alward, ZP. Li, DR. Allee, T. Clark, IEEE 2005 Proc. Custom Integrate Circuits Conf. (2005) 219. Merticaru, 2006, J. Non-Cryt. Solids, 352, 3849, 10.1016/j.jnoncrysol.2006.06.011 Shringarpure, 2007, IEEE Trans. Electron Devices, 54, 1781, 10.1109/TED.2007.899667 Hafdi, 2005, Jpn. J. Appl. Phys, 44, 1192, 10.1143/JJAP.44.1192 HC. de Graaff, FM. Klaassen, 1990, Compact transistor modelling for circuit design.(S. Selberher: Wien-New York: Springer-Verlag). Z. Hafdi, Proc. 2nd Int. Conf. on Electrical Systems Design and Technologies, Hammamet-Tunisia, (2008).