An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor
Tóm tắt
Từ khóa
Tài liệu tham khảo
Naderi, 2016, T-CNTFET with gate-drain overlap and two different gate metals: a novel structure with increased saturation current, ECS J Solid State Sci Technol, 1, 3032, 10.1149/2.0061608jss
Naderi, 2016, Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions, J Comput Electron, 1, 347, 10.1007/s10825-015-0781-2
Naderi, 2016, Attributes in the performance and design considerations of asymmetric drain and source regions in carbon nanotube field effect transistors: quantum simulation study, ECS J Solid State, Sci Technol, 1, 63, 10.1149/2.0061607jss
Naderi, 2016, Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region, Superlattices Microstruct, 1, 170, 10.1016/j.spmi.2015.11.005
Fulton, 1987, Observation of single-electron charging effects in small tunnel junctions, Phys Rev Lett, 59
Shorokhov, 2017, Single-electron tunneling through an individual arsenic dopant in silicon, Nanoscale, 9
Wang, 2017, Room temperature Coulomb blockade mediated field emission via self-assembled gold nanoparticles, Phys Lett A, 381, 476, 10.1016/j.physleta.2016.11.015
Khadem Hosseini, 2017, Current analysis and modelling on fullerene single electron transistor at room temperature, J Electron Mater, 46, 4294, 10.1007/s11664-017-5354-7
Khan Durrani, 2010
Gorter, 1951, A possible explanation of increases in electrical resistance of thin metal films at low temperature and low electric field strength, Physical, 17, 777
Schoonveld, 2000, Coulomb-blockade transport in single-crystal organic thin-film transistors, Nature, 404, 977, 10.1038/35010073
Park, 2002, Coulomb blockade and the Kondo effect in single-atom transistors, Nature, 417, 722, 10.1038/nature00791
Khadem Hosseini, 2017, The analysis of Coulomb blockade in fullerene single electron transistor at room temperature, J Nanoanalysis, 4, 120
Zheng, 2015, Room temperature Coulomb blockade effects in Au nanocluster/pentacene single electron transistors, Nanotech, 26, 35, 10.1088/0957-4484/26/35/355204
Willy, 2016, Modeling and simulation of single electron transistor with master equation approach, Journal of Physics: Conference Series 739 IOP science
Qiu, 2017, Scaling carbon nanotube complementary transistors to 5-nm gate lengths, Science, 355
Seike, 2015, Carbon nanotube single-electron transistors with single-electron charge storages, Jpn J Appl Phys, 54, 10.7567/JJAP.54.06FF05
Häkkinen, 2015, Charge sensitivity enhancement via mechanical oscillation in suspended carbon nanotube devices, Nano Letter, 15, 1667, 10.1021/nl504282s
Karimi, 2014, Development of carbon nanotube based biosensors model for detection of single-nucleotide polymorphism, Sci Adv Mater, 6, 513, 10.1166/sam.2014.1745
Ahmadi MT, Saad I, Karamdel J, Ismail R, Arora VK. Carrier velosity in carbon nano tube field effect transistor. In: ICSE:2008 IEEE international conference on semiconductor electronics, proceedings, 2008. p. 519–23.
Egami, 2017, First-principles study on electron transport through BN-dimer embedded zigzag carbon nanotubes, Physica E, 88, 212, 10.1016/j.physe.2017.01.002
Ahmadi, 2008, The ultimate ballistic drift velocity in carbon nanotubes, J Nanomaterials, 769250, 8
<http://www.atomistix.com>.
Goharrizi, 2016, Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping, IEEE Trans Electron Devices, 63, 3761, 10.1109/TED.2016.2586459
Buscarino, 2018, Carbon black based capacitive fractional order element towards a new electronic device, AEU-Int J Electron Commun, 84, 307, 10.1016/j.aeue.2017.12.018
Tucker, 1992, Complementary digital logic based on the Coulomb blockade, J Appl Phys, 72, 4399, 10.1063/1.352206
Adam, 2008, Boltzmann transport and residual conductivity in bilayer graphene, Phys Rev B, 77, 115436, 10.1103/PhysRevB.77.115436
John, 2004, Quantum capacitance in nanoscale device modeling, Appl Phys Lett, 96, 5180
Kliros, 2010, Scaling effects on the gate capacitance of graphene nanoribbon transistors, Inf Sci Technol, 13, 332
Chen, 2008, Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devices, IEEE IEDM Tech Digest, 21, 509
Karimi, 2014, Analytical development and optimization of a graphene–solution interface capacitance model, Beilstein J Nanotechnol, 5, 603, 10.3762/bjnano.5.71
Ahmadi MT, Johari Z, Amin NA, Mousavi SM, Ismail R. Carbon nanotube conductance model in parabolic band structure. In: ICSE2010 Proc., Melaka, Malaysia; 2010.
Schaper, 2011, Comparative studies on the electrical and mechanical behavior of catalytically grown multiwalled carbon nanotubes and scrolled graphene, Nano Letter, 11, 3295, 10.1021/nl201655c
Avramov, 2003, Single wall carbon nanotubes density of states: comparison of experiment and theory, Chem Phys Lett, 370, 597, 10.1016/S0009-2614(03)00113-1
Odom, 2000, Structure and electronic properties of carbon nanotubes, J Phys Chem, 104, 2794, 10.1021/jp993592k
Liang, 2008, Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection, J Appl Phys, 104
Karimi, 2012, Analytical modeling of graphene-based DNA sensor, Sci Adv Mater, 4, 10.1166/sam.2012.1405
Ilani, 2006, Measurement of the quantum capacitance of interacting electrons in carbon nanotubes, Nat Phys, 10, 687, 10.1038/nphys412
Rahmani, 2013, Performance of bilayer graphene nanoribbon schottky diode in comparison with conventional diodes, J Comput Theor Nanosci, 10, 10.1166/jctn.2013.2699
Datta, 2012
Neamen, 2003
Anantram, 2006, Physics of carbon nanotube electronic devices, Rep Prog Phys, 69, 10.1088/0034-4885/69/3/R01
Sahafi, 2013, Efficient single-electron transistor inverter-based logic circuits and memory elements, J Comput Theor Nanosci, 10, 1171, 10.1166/jctn.2013.2824
Sahafi, 2014, An efficient versatile logic cell for single-electron technology, Quantum Matter, 3, 57, 10.1166/qm.2014.1096