An RBS study on the annealing behaviour of Cu thin films on brominated Si(111) and Si(100) substrates

Elsevier BV - Tập 71 - Trang 308-313 - 1992
K. Sekar1, P.V. Satyam1, G. Kuri1, D.P. Mahapatra2, B.N. Dev1
1Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
2Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005, India

Tài liệu tham khảo

Nakahara, 1990, Nucl. Instr. and Meth., B45, 467, 10.1016/0168-583X(90)90877-W De Laere, 1990, Semicond. Sci. Technol., 5, 745, 10.1088/0268-1242/5/7/019 Golovchenko, 1982, Phys. Rev. Lett., 49, 560, 10.1103/PhysRevLett.49.560 Bedzyk, 1982 Dev, 1985, Surf. Sci., 163, 457, 10.1016/0039-6028(85)91072-6 Dev, 1985 Kaplan, 1982, 2 Mohapatra, 1988, Phys. Rev., B38, 12556, 10.1103/PhysRevB.38.12556 Cowan, 1980, Phys. Rev. Lett., 44, 1680, 10.1103/PhysRevLett.44.1680 Bedzyk, 1982, J. Vac. Sci. Technol, 20, 634, 10.1116/1.571412 Funke, 1987, Surf. Sci., 188, 378, 10.1016/S0039-6028(87)80195-4 Eteläniemi, 1991, Surf. Sci., 251/252, 483, 10.1016/0039-6028(91)91039-Z