An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

IEEE Transactions on Microwave Theory and Techniques - Tập 55 Số 12 - Trang 2660-2669 - 2007
Olivier Jardel1, Fabien de Groote1, Tibault Reveyrand1, S.L. Delage2, C. Charbonniaud3, Jean-Pierre Teyssier4, D. Floriot2, Enrico Zanoni4
1Univ. de Limoges, Limoges
2Alcatel/Thales III-V Laboratory, Marcoussis, France
3[AMCAD Engineering, ESTER Technopole, Limoges, France]
4[XLIM C2 S2-Unité Mixte de Recherche, Centre National de la Recherche Scientifique, Université de Limoges, Brive, France]

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